Visible light heat reflection temperature measurement device

Abstract

The invention discloses a visible light heat reflection temperature measurement device, comprising an illumination light path for providing an illumination pulse signal for a sample to be measured; a sample excitation module for applying an excitation pulse signal to the sample to be measured; an imaging module for capturing all the samples The reflected signal of the illumination pulse reflected by the sample to be tested is obtained, and the thermal process image of the sample to be tested under the excitation of the excitation pulse signal is obtained; wherein, the imaging module captures the same image of a plurality of excitation pulse signals in the same exposure period The illumination pulse reflection signal corresponding to the phase; the phase of the excitation pulse signal corresponding to the illumination pulse reflection signal captured by the imaging module in different exposure periods is different. The embodiment of the present invention can realize the thermal process image of the semiconductor device through the visible light thermal reflection temperature measurement device, and by reducing the preset time length, the preset phase difference between the illumination pulse signal and the excitation pulse signal is reduced, and the time accuracy of the thermal imaging process is greatly improved. Improved time resolution.

Description

technical field [0001] The invention relates to the technical field of microscopic imaging, in particular to a visible light heat reflection temperature measuring device. Background technique [0002] In the field of semiconductor devices, first of all, due to the continuous breakthrough of micro-nano processing technology, the number of transistors per unit area is increasing, which has reached billions per square centimeter, and the operating frequency of electronic devices is getting higher and higher. It has reached GHz; secondly, due to the frequent switching action of semiconductor devices in the working process, it will cause heat generation, which will cause the temperature inside the device to rise, and temperature is a crucial parameter of semiconductor integrated circuits. An important basis for the failure mechanism, so a thermal distribution measurement technique with high temporal and spatial resolution is required. [0003] However, there are three commonly u...

AI Technical Summary

Problems solved by technology

Because capturing an image with a sufficiently high time resolution requires the pulse width of the illumination source to be at the level of microseconds or even nanoseconds, and it is also necessary to adapt the exposure time of the CCD camera in the imaging system to the pulse width or brightness of the illumination source, so the requirements for the equipment High, but the existing technology is generally difficult to achieve, thus limiting the improvement of time resolution

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