Preparation method of metal side wall and device structure

Abstract

The invention provides a preparation method of a metal side wall and a device structure, and the preparation method comprises the steps: providing a substrate, sequentially forming a metal film layer and a mask pattern layer on the upper surface of the substrate from the bottom to the top, and enabling the mask pattern layer to expose a part of the metal film layer; taking the mask pattern layer as an etching mask, etching the metal film layer by adopting an ion beam etching process to form an etching groove in the metal film layer, and forming a metal side wall on the surface of the side wall of the mask pattern layer by utilizing redeposition of metal atoms in the etching process; and performing mask removal processing on the metal side wall to remove the mask pattern layer on the outer surface of the metal side wall. According to the method, the problem that the ultrathin metal side wall cannot be prepared due to limitation of photoetching precision when the metal side wall is prepared by adopting a photoetching process or a stripping process in the prior art is solved.

Description

technical field [0001] The invention relates to the field of device structure design, in particular to a method for preparing a metal side wall and a device structure. Background technique [0002] In the design of device structures and integrated circuit processes, metal lines or metal sidewalls are usually prepared by photolithography or lift off, so their line width or thickness is largely limited by photolithography accuracy. Therefore, it is difficult to prepare ultra-fine metal lines or ultra-thin metal sidewalls (even in the case of high photolithography precision, only metal lines with micron-scale line widths or metal sidewalls with micron-scale thickness can be prepared) . [0003] However, in some fields that require high line width or thickness, it is necessary to realize ultra-fine metal lines or ultra-thin metal sidewalls; in view of this, it is necessary to design a new preparation method and device structure for metal sidewalls to solve the problem. above t...

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for preparing metal sidewalls and a device structure, which are used to solve the problem of limited light when the existing metal sidewalls are prepared by photolithography or lift-off. The engraving accuracy cannot produce ultra-thin metal sidewalls

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