Method for fabricating semiconductor device channel, semiconductor device and manufacturing method thereof

Abstract

Disclosed is a method for fabricating a semiconductor device channel, comprising the steps of: forming a first epitaxial layer on a semiconductor substrate; forming a second epitaxial layer and a third epitaxial layer at two positions on the first epitaxial layer corresponding to the first region and the second region of the semiconductor substrate respectively, wherein the height of the second epitaxial layer is greater than the height of the third epitaxial layer; and forming a fourth epitaxial layer on the second epitaxial layer and the third epitaxial layer, wherein the second epitaxial layer and the third epitaxial layer provide the channel of a transistor. The method for fabricating the semiconductor device channel forms the second and third epitaxial layers of different heights in the first region and the second region of the substrate respectively, so as to simultaneously form transistor channels of different gate lengths in the Core and IO regions of the semiconductor device and reduce process complexity.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a method for manufacturing a channel of a semiconductor device, a semiconductor device and a manufacturing method thereof. Background technique [0002] With the continuous development of semiconductor technology, continuously reducing the size of devices and increasing integration to obtain better performance have become the goal of integrated circuit technology and the driving force for development. The most basic unit in an integrated circuit is a metal-oxide-semiconductor field effect transistor (MOSFET), and a vertical field effect transistor (Vertical Field Effect Transistor, VFET) is a three-dimensional structure, which can improve integration. [0003] The vertical field effect transistor is formed on the surface of the semiconductor substrate, and the semiconductor substrate includes a Core area (core area) and an IO area (input-output area). When forming ...

AI Technical Summary

Problems solved by technology

When forming a device on a semiconductor substrate, the transistor channels in the core area and the input and output areas cannot be formed at the same time due to the different gate lengths, which makes the process more complicated.

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