A kind of preparation method of gan-based vertical cavity surface emitting laser

Abstract

Provided is a preparation method for GaN-based vertical cavity surface emitting laser, forming a patterned metal substrate on a seed layer by using the photo-etching and patterned electroplating technologies; transferring a sample to a temporary substrate by using the glue bonding technology; removing a sapphire substrate by using the self-splitting laser stripping technology and separating devices simultaneously; removing a buffer layer, a u-GaN layer and part of an n-GaN layer; making an n metal electrode and a top dielectric film DBR; and removing the temporary substrate to obtain the discrete GaN-based vertical cavity surface emitting laser. The heat dissipation performance of devices is improved, and the problems of metal crimping and short circuit of devices caused by metal cutting are avoided. The process flow of device preparation is simplified, and the cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of vertical-cavity surface-emitting lasers, and in particular relates to a preparation method of a GaN-based vertical-cavity surface-emitting laser. Background technique [0002] GaN-based vertical-cavity surface-emitting laser (VCSEL) is a new type of semiconductor laser with great potential. Compared with traditional edge-emitting lasers, vertical-cavity surface-emitting lasers have many obvious advantages, including low power consumption, low threshold current, Single longitudinal mode operation, circular symmetric output beam, wafer-level testing, low manufacturing cost, efficient coupling with optical fiber, and easy formation of dense two-dimensional arrays. These advantages make it have extremely broad application prospects and huge market value in information storage, laser display, laser printing, lighting and other fields, and it has become a research hotspot in the field of optoelectronics in rece...

AI Technical Summary

Problems solved by technology

If you use a cutting machine to cut, you need to scribe multiple times, which is prone to curling of the metal substrate; if you use laser cutting, the metal melt may be sprayed to the side wall of the device during cutting, causing leakage current

Therefore, these two cutting methods will have a negative impact on device performance, and even lead to device failure and reduce process yield.

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