Check patentability & draft patents in minutes with Patsnap Eureka AI!

Overlay control with non-zero offset prediction

A non-zero, controller technology, applied in the photoengraving process of pattern surface, photoengraving process exposure device, semiconductor/solid-state device manufacturing, etc., can solve the problems of different stacking errors and so on

Active Publication Date: 2019-10-08
KLA TENCOR TECH CORP
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the overlay error measured at different manufacturing stages and / or by different metrology tools may be different

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Overlay control with non-zero offset prediction
  • Overlay control with non-zero offset prediction
  • Overlay control with non-zero offset prediction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Reference will now be made in detail to the disclosed subject matter which is illustrated in the accompanying drawings. The invention has been particularly shown and described with respect to certain embodiments and specific features thereof. The embodiments set forth herein are to be regarded as illustrative and not restrictive. It will be readily apparent to those skilled in the art that various changes and modifications in form and details can be made without departing from the spirit and scope of the invention.

[0024] Embodiments of the invention relate to a method for maintaining the superposition between a current layer and one or more previous layers on a sample within selected tolerances while reducing NZO associated with control data from different metrology tools. Process control system. As used throughout this disclosure, the term "sample" generally refers to a substrate (eg, wafer or the like) formed of semiconductor or non-semiconductor material. For e...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADIdata, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample.

Description

[0001] Cross References to Related Applications [0002] This application claims under 35 U.S.C. §119(e) filed January 25, 2017 by Mike Adel, Amnon Manassen, Bill Pearson Pierson, Ady Levy, Pradeep Subrahmanyan, Liran Yerushalmi, Dongsub Choi, Hoyoung Heo, Dror Alumot (DrorAlumot) and John Robinson (John Robinson) are inventors and the serial number is 62 / 450,454, which is hereby incorporated by reference in its entirety. technical field [0003] This disclosure relates generally to stack control, and more particularly to stack control using non-zero offset prediction. Background technique [0004] Semiconductor devices typically include multiple layers of patterned material, where each successive layer must be aligned with the previous layer within tight tolerances. Thus, a fabrication line can utilize a process control system with feedback and / or feed-forward control data to monitor and adjust fabrication tool settings to maintain overlay errors (e.g., overlay registr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20H01L21/027
CPCG03F7/705G03F7/70633G03F7/70508G03F7/70625G03F7/0002H01L21/027G03F7/7085
Inventor M·A·阿德尔A·玛纳森W·皮尔逊A·莱维P·苏布拉马尼扬L·叶鲁舍米崔东燮H·浩D·阿鲁穆特J·鲁滨逊
Owner KLA TENCOR TECH CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com