Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An atomic layer deposition system

A kind of atomic layer deposition and fluid technology, applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problem that it is difficult to realize the rapid discharge of gas flow by reaction by-products, the process of surface deposition and the emptying of reaction by-products Separate flow control and other issues

Active Publication Date: 2021-11-30
SHAANXI COAL & CHEM TECH INST +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this flow can ensure the best aerodynamic environment for film growth, it is difficult to achieve the gas flow required for the rapid discharge of reaction by-products
The traditional atomic layer deposition system only sets a unified gas flow rate, and cannot implement separate flow control for the surface deposition process and the reaction by-product emptying process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An atomic layer deposition system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] Al by atomic layer deposition 2 o 3 For example, the precursor reactants are TMA and H 2 O. TMA and H 2 The O sources are respectively installed in two different reaction source arrays (see figure 1 Two different reactant source arrays 41) in order to avoid their possible in-line mixing. The average temperature in the reaction chamber is 150°C, the sample heating temperature is 250°C, and the gas pipeline temperature is 50°C. The time sequence of reactant injection and by-product evacuation for single-layer coating is: 100 milliseconds H 2 O molecule injection + 500 millisecond reaction by-product discharge + 100 millisecond TMA molecule injection + 300 millisecond reaction by-product discharge. The system uses a BOC Edwards mechanical vacuum pump to establish a vacuum environment in the reaction chamber. Flow control adopts MKS company IP66 series mass flow controller (MFC). The gas valve adopts Swagelok company DL series atomic layer deposition special valve, ...

Embodiment 2

[0067] Atomic Layer Deposition of TiO 2 As an example, the precursor reaction sources are respectively TiCl 4 with H 2 O. TiCl 4 with H 2 The O sources are respectively installed in two different reaction source arrays (see figure 1 Two different reactant source arrays 41) in order to avoid their possible in-line mixing. The average temperature in the reaction chamber is 120°C, the sample heating temperature is 220°C, and the gas pipeline temperature is 50°C. The time sequence of reactant injection and by-product evacuation for single-layer coating is: 80 milliseconds H 2 O molecule injection + 100 milliseconds infiltration + 500 milliseconds reaction by-product discharge + 100 milliseconds TiCl 4 Molecular injection + 100 ms infiltration + 300 ms reaction by-product discharge. The film growth rate is 0.072 nm / cycle. The coating thickness is 35 nm.

[0068] h 2When the O molecule is injected, the by-product removal fluid introduction pipeline, the fluid introduction...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of atomic layer deposition, in particular to an atomic layer deposition system. The atomic layer deposition system provided by the present invention includes a fluid source introduction pipeline, a reaction device and a first control device. The reaction device includes a reaction device body, a reaction device fluid introduction pipeline and a reaction device fluid outlet pipeline. The device body, the fluid inlet pipe of the first regulation device and the fluid outlet pipe of the first regulation device, the fluid inlet pipe of the reaction device and the fluid inlet pipe of the first regulation device are all in fluid communication with the fluid source inlet pipe. The atomic layer deposition system provided by the present invention is beneficial to the establishment of laminar flow conditions in the growth process of the three-dimensional blunt body surface, the suppression of aerodynamic interface layer separation, and the rapid completion of the coating process, and can save more than 2 times of raw materials for atomic layer deposition, And it can realize fast coating.

Description

【Technical field】 [0001] The invention belongs to the technical field of atomic layer deposition, in particular to an atomic layer deposition system. 【Background technique】 [0002] In the development of modern science and technology, especially in the development of nanoscience and technology, almost all related applications involve nano-coating technology for the purpose of realizing various surface functions, especially nano-coating technology that can control the thickness at the atomic scale . In the selection of coating methods, although the wet chemical method under liquid phase conditions is low in cost, it is difficult to form a uniform and dense high-quality nano-coating layer of equal thickness. The currently widely used nano-coating technologies are based on nano-coating technologies under gas phase conditions, such as physical vapor deposition, chemical vapor deposition, and atomic layer deposition. Among them, the atomic layer deposition technology has a uniq...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/44C23C16/52
CPCC23C16/4412C23C16/45504C23C16/45544C23C16/52
Inventor 贾培军郭鸿晨许淘元李瑞斌陈静升赵超崔东旭
Owner SHAANXI COAL & CHEM TECH INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com