Laser irradiation device, thin-film transistor manufacturing method, program, and projection mask

A thin-film transistor and laser irradiation technology, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, lasers, etc., can solve the problems of small electron mobility and charge mobility, and achieve the effect of suppressing fluctuations and reducing characteristic deviations

Inactive Publication Date: 2019-10-11
V TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the amorphous silicon thin film has low electron mobility, if the amorphous silicon thin film is used in the channel region, there is a problem that the mobility of charges in the thin film transistor becomes small.

Method used

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  • Laser irradiation device, thin-film transistor manufacturing method, program, and projection mask
  • Laser irradiation device, thin-film transistor manufacturing method, program, and projection mask
  • Laser irradiation device, thin-film transistor manufacturing method, program, and projection mask

Examples

Experimental program
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Effect test

no. 1 approach

[0047] figure 1 It is a figure which shows the structural example of the laser irradiation apparatus 10 in 1st Embodiment of this invention.

[0048] In the first embodiment of the present invention, the laser irradiation device 10 is used in the manufacturing process of a semiconductor device such as a thin film transistor (TFT) 20 , for example, to irradiate a region where a channel region is to be formed and perform annealing, so that the channel region The channel region forms a device in which a predetermined region is polycrystallized.

[0049] The laser irradiation device 10 is used, for example, when forming a thin film transistor of a pixel such as a peripheral circuit of a liquid crystal display device. When forming such a thin film transistor, first, a gate electrode made of a metal film such as Al is patterned on the substrate 30 by sputtering. Then, a gate insulating film made of a SiN film is formed on the entire surface of the substrate 30 by a low-temperature...

no. 2 approach

[0082] In the second embodiment of the present invention, a part of the laser light passing through the peripheral region (edge ​​region) of the projection mask is blocked by providing a plurality of light shielding portions. Accordingly, the energy of the laser light in the peripheral region of the projection mask 150 is reduced, and the energy of the laser light in the entire channel region can be made uniform.

[0083] Since the configuration example of the laser irradiation device of the second embodiment and figure 1 The laser irradiation device 10 of the illustrated first embodiment is the same, and therefore detailed description thereof will be omitted.

[0084] If the laser is irradiated without setting the shading part, then if Figure 6 As shown, in the channel region, the energy of the laser beam passing through the edge region of the transmission region 151 becomes larger, which causes the crystallization speed of the edge region to increase. Therefore, in the se...

no. 3 approach

[0092] In the third embodiment of the present invention, the energy of the laser light in the channel region is made uniform by providing an auxiliary pattern on the projection mask and also providing a light-shielding part inside the transmissive part.

[0093] Since the configuration example of the laser irradiation device according to the third embodiment and figure 1 The laser irradiation device 10 of the illustrated first embodiment is the same, and therefore detailed description thereof will be omitted.

[0094] Figure 11 It is a figure which shows the structural example of the projection mask 150 of 3rd Embodiment.

[0095] Such as Figure 11 As shown in (a), the projection mask 150 is provided with the auxiliary pattern 153 along the longitudinal direction of the transmissive region 151 , and the light shielding portion 154 is provided in the edge region (region α) of the transmissive region 151 in the width direction.

[0096] Regarding the long side direction of ...

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Abstract

A laser irradiation device according to an embodiment of the present invention is provided with: a light source for generating laser light; a projection lens for irradiating a predetermined area of anamorphous silicon thin-film attached to a thin-film transistor with the laser light; and a projection mask pattern which is disposed on the projection lens and which transmits the laser light througha predetermined projection pattern. The laser irradiation device is characterized in that the projection mask pattern includes, in addition to a transmission area corresponding to the predetermined area, an auxiliary pattern which is disposed around the transmission area and which transmits the laser light.

Description

technical field [0001] The present invention relates to the formation of thin film transistors, and in particular to a laser irradiation device for forming a polysilicon thin film by irradiating laser light on an amorphous silicon thin film on the thin film transistor, a manufacturing method and a program of the thin film transistor. Background technique [0002] As a thin film transistor having an anti-staggered structure, there is a thin film transistor using an amorphous silicon thin film for a channel region. However, since an amorphous silicon thin film has low electron mobility, if the amorphous silicon thin film is used in a channel region, there is a problem that the mobility of charges in a thin film transistor becomes low. [0003] Therefore, there is a technique of instantaneously heating a predetermined region of an amorphous silicon thin film with a laser to achieve polycrystallization, forming a polysilicon thin film with high electron mobility, and using this ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L21/027H01L21/268
CPCH01L21/02532H01L21/02678H01L21/027H01L21/268G03F7/2053H01L21/67011H01L29/66742H01L29/786H01S3/0007
Inventor 水村通伸
Owner V TECH CO LTD
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