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High-frequency resistor and method for manufacturing high-frequency resistor

A technology of high-frequency resistors and manufacturing methods, applied in the direction of resistors, thin film resistors, resistor terminals/electrodes, etc., can solve the problems that high-frequency resistors cannot meet the needs of the industry, and achieve the effect of reducing costs

Active Publication Date: 2021-08-17
YAGEO ELECTRONICS CHINA CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the current high-frequency resistors cannot meet the needs of the industry

Method used

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  • High-frequency resistor and method for manufacturing high-frequency resistor
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  • High-frequency resistor and method for manufacturing high-frequency resistor

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Embodiment Construction

[0024] The terms "first", "second", ... etc. used herein do not specifically refer to a sequence or sequence, but are only used to distinguish elements or operations described with the same technical terms.

[0025] Please refer to Figure 1A to Figure 1C , Figure 1A It is a schematic top view structure diagram of a high frequency resistor 100 according to an embodiment of the present invention, Figure 1B for along Figure 1A The schematic diagram of the cross-sectional structure viewed by the tangent line CL1A-CL1A', Figure 1C It is a schematic bottom view of the high frequency resistor 100. Such as Figure 1B As shown, the high frequency resistor 100 includes a substrate 110, a resistance layer 120, a first electrode layer 130, a second electrode layer 140, a first conductor layer 150, a second conductor layer 160, a first dielectric layer 170 and a second Dielectric layer 180.

[0026] The substrate 110 has an upper surface 112 , a lower surface 114 and at least one ...

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Abstract

A high-frequency resistor and a method for manufacturing the high-frequency resistor. The high frequency resistor includes a substrate, a resistance layer, a first electrode layer, a second electrode layer, a first dielectric layer and a second dielectric layer. In the manufacturing method, first, a substrate is provided. Next, a resistance layer is formed on the upper surface of the substrate. Then, a first electrode layer and a second electrode layer are formed. The first electrode end of the first electrode layer covers the end of the resistance layer, and the second electrode end of the first electrode layer covers the first part of the lower surface of the substrate. The third electrode end of the second electrode layer covers the other end of the resistance layer, and the fourth electrode end of the second electrode layer covers the second part of the lower surface of the substrate. Then, a first dielectric layer and a second dielectric layer are formed between the first electrode layer and the second electrode layer. In the high-frequency resistor of the present invention, resistance and capacitance are respectively formed on the upper surface and the lower surface of the base material, the effective volume of the high-frequency resistor itself is fully utilized, and the manufacturing cost is reduced.

Description

technical field [0001] The present invention relates to a high-frequency resistor and a method for manufacturing the high-frequency resistor, and in particular relates to a high-frequency resistor and a method for manufacturing the high-frequency resistor suitable for high-frequency and high-power devices. Background technique [0002] With the rapid development of communication technology, smart phones have been widely used in human life. In order to transmit and receive high-frequency signals, general smartphones are designed with high-frequency circuits, and the resistors used in high-frequency circuits are usually called high-frequency resistors, which can meet the requirements of high-frequency circuits for high-frequency signal operation. For example, Chinese Patent No. CN101923928A discloses a high-frequency resistor. It includes a substrate, a back electrode, a surface electrode, a resistor body and a first side conductive electrode. In order to match the character...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/00H01C7/18H01C1/14H01C17/06H01G4/40
CPCH01C1/14H01C7/00H01C7/006H01C7/18H01C17/06H01G4/40
Inventor 萧胜利林广成李焕文陈致龙
Owner YAGEO ELECTRONICS CHINA CO LTD