Three-dimensional memory, manufacturing method thereof, and electronic device
A memory, three-dimensional technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as reducing the performance and service life of three-dimensional memory, affecting the performance and service life of control devices, and avoiding the transmission of charged particles. To the control device, improve the performance and service life, the effect of low cost
Active Publication Date: 2019-11-15
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
When etching the connection holes, the charged particles in the plasma gas will be transmitted to the control devices in the control part through the conductive connectors, affecting the performance and service life of the control devices, thereby reducing the performance and service life of the three-dimensional memory
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[0064] The following are preferred embodiments of the application. It should be pointed out that for those skilled in the art, without departing from the principle of the application, some improvements and modifications can also be made, and these improvements and modifications are also considered as the present invention. The scope of protection applied for.
[0065] Before introducing the embodiments of the present application, first introduce the technical problems mentioned in the background art.
[0066] When preparing a three-dimensional memory, the traditional method is to form the storage part in some areas on the same side of the substrate, and form the control part in other areas, first form an interlayer insulating layer on the other side of the substrate, and then form an interlayer insulating layer penetrating through the interlayer insulating layer. Layer and the connection holes of the substrate to expose the conductive connectors. Afterwards, a protective laye...
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The invention provides a three-dimensional memory, a manufacturing method thereof, and an electronic device. The manufacturing method comprises steps: a substrate is provided, a storage portion and acontrol portion are formed on one side of the substrate, the storage portion is electrically connected with the control portion, and the storage portion includes a first conductive connector; an interlayer insulating layer is formed on the other side of the substrate; a connecting hole passing through the interlayer insulating layer and the substrate is formed to expose the first conductive connector; an etching barrier layer and a protection layer are formed sequentially on the hole wall of the connecting hole; the protection layer corresponding to the first conductive connector is etched toexpose at least part of the etching barrier layer; a wet etching method is adopted to etch the etching barrier layer to expose at least part of the first conductive connector again; a second conductive connector connected to the first conductive connector is formed in the connecting hole. Through additionally arranging the etching barrier layer on the hole wall of the connecting hole and adoptingthe wet etching method to etch the etching barrier layer, the use performance of the three-dimensional memory is improved, and the service life is prolonged.
Description
technical field [0001] The application belongs to the technical field of semiconductors, and in particular relates to a three-dimensional memory, a preparation method thereof, and electronic equipment. Background technique [0002] Three-dimensional (3 Dimension, 3D,) memory is a storage device that three-dimensionally arranges storage units on a substrate, which has the advantages of high integration density, large storage capacity, and low power consumption, so it has been widely used in electronic products. Wide range of applications. [0003] During the manufacturing process of the three-dimensional memory, the storage part is usually formed in some regions on the same side of the substrate, the control part is formed in other regions, and then the conduction part is formed on the other side of the substrate. When forming the conduction part, the connection hole is usually etched out by dry etching to expose the conductive connection part in the storage part. When etch...
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Login to View More IPC IPC(8): H01L27/11551H01L27/11578H01L21/768
CPCH01L21/76802H10B41/20H10B43/20
Inventor 戴健谢海波郑标曾最新刘佳
Owner YANGTZE MEMORY TECH CO LTD