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Reverse-biased silicon light emitting soi photoelectric isolator, integrated circuit and manufacturing method thereof

A technology of photoelectric isolator and manufacturing method, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., and can solve the problems of increased manufacturing difficulty, difficult dispensing and spot welding process, and high manufacturing cost

Active Publication Date: 2021-03-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA +8
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the reduction of package size, the dispensing and spot welding process is more difficult, the manufacturing difficulty is increased, and the manufacturing cost is extremely high

Method used

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  • Reverse-biased silicon light emitting soi photoelectric isolator, integrated circuit and manufacturing method thereof
  • Reverse-biased silicon light emitting soi photoelectric isolator, integrated circuit and manufacturing method thereof
  • Reverse-biased silicon light emitting soi photoelectric isolator, integrated circuit and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] Example 1 A reverse-biased silicon light-emitting SOI photoelectric isolator

[0071] Such as Figure 1-Figure 3 As shown, this embodiment includes n - Doped first substrate 1, as SiO 2 The first dielectric layer 2 and the top layer of silicon 3 in the middle layer, the first substrate 1 and the top layer of silicon 3 are bonded by intelligent lift-off technology; The detector, the first dielectric layer 2 and the silicon light source fabricated in the top layer of silicon 3; the first substrate 1 is n - doping / p - A doped silicon substrate, the first substrate 1 is implanted with a first deep p-well 5 and connected with the first deep p-well 5 to form a first island with a first high aspect ratio p + Well 6 and the second high aspect ratio p + Well 7, the upper part of the first island is embedded with a first thin n + well 4; silicon photodetector cathode 8 from the first high aspect ratio p + Well 6 lead out, silicon photodetector anode 9 from the first thin n...

Embodiment 2

[0076] Example 2 A reverse-biased silicon light-emitting SOI photoelectric isolator

[0077] The difference between this embodiment and embodiment 1 is that, as Figure 4 and Figure 5 As shown, the top layer of silicon 3 is a p-type doped silicon film, and the top layer of silicon 3 is embedded with seven spaced and interconnected n + The well consists of a zigzag n + well, sawtooth n + The well divides the p-type doped silicon film into eight inner zigzag p-wells that are spaced apart and communicated with each other.

[0078] from zigzag n + The positive electrode 12 of the light source is drawn from the well, and the negative electrode 15 of the light source is drawn from the inner zigzag p-well; Figure 4 and Figure 5 The wiring method of the silicon light source is given.

[0079] In fact, n + The number of wells can be determined according to actual needs. In this embodiment, seven wells are taken as an example for illustration.

Embodiment 3

[0080] Example 3 A manufacturing method of a reverse-biased silicon light-emitting SOI opto-isolator

[0081] This embodiment is used to make embodiment 1, and proceeds according to the following steps:

[0082] One, choose n - doping / p - The doped first silicon wafer is used as the first substrate 1. After the surface of the first substrate 1 is cleaned, the first deep p-well is sequentially completed on the first substrate 1 by means of a mask plate using an ion implantation process. 5. The first high aspect ratio p + Well 6, the second high aspect ratio p + The manufacture of the well 7 forms the first island, and then embeds the first thin n on the upper part of the first island + Well 4;

[0083] 2. Growth of the first SiO with a thickness of 300nm-500nm on the first substrate 1 by the low-pressure chemical vapor deposition method 2 Layer, in order to play the role of electrical isolation;

[0084] 3. Select the second silicon wafer, and implant H into the second s...

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Abstract

The invention discloses a reverse-biased silicon light-emitting SOI photoelectric isolator, which includes a first substrate as the substrate silicon, a SiO 2 The first dielectric layer and the top layer of silicon in the middle layer, the first substrate and the top layer of silicon are bonded by intelligent stripping technology; the reverse-biased silicon light-emitting SOI photoelectric isolator includes a silicon photodetector fabricated in the first substrate, a first The dielectric layer and the silicon light source fabricated in the top silicon. The invention also discloses a manufacturing method of the photoelectric isolator, and further discloses an integrated circuit of the above-mentioned reverse-biased silicon light-emitting SOI photoelectric isolator and a manufacturing method thereof. The invention provides silicon light sources and silicon light detectors arranged axially, with small area, low manufacturing cost, high light transmission efficiency and integration; the photoelectric isolator of the invention can be integrated with the circuit on the same substrate The silicon light source and the silicon photodetector are axially stacked, which further reduces the manufacturing cost, has a high degree of integration, and is suitable for the integration technology field of photoelectric isolators.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, and relates to a photoelectric isolator, in particular to a reverse-biased silicon light-emitting SOI photoelectric isolator, an integrated circuit and a manufacturing method thereof. Background technique [0002] An opto-isolator is an important optoelectronic device that can send signals from one circuit to another, using light instead of wires, using light-emitting diodes (LEDs) to convert electrical signals into optical signals, and then using photodetectors to receive the optical signals and This is converted into an electrical signal. Photoelectric isolators have the advantages of strong anti-interference ability, good reliability, and electrical isolation, and are widely used in circuits such as logic switches and digital-to-analog conversions. [0003] With the development of the electronic information industry, electronic equipment terminals are developing toward m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/173H01L31/18
CPCH01L31/173H01L31/1804Y02P70/50
Inventor 黄磊孙宏亮徐开凯赵建明施宝球范洋洪继霖钱津超李建全曾尚文李洪贞廖楠徐银森黄平刘继芝陈勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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