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Measuring and controlling aberrations in electron microscopes

An electron microscope and electron energy technology, applied in the direction of circuits, discharge tubes, electrical components, etc., can solve problems such as tedious, ineffective, and limited number of electron microscope calibrations

Active Publication Date: 2019-12-06
IBM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To measure chromatic aberration, this method requires recalibrating the microscope for each energy setting, a tedious process
Also, none of these methods work when using optoelectronics
The difficulty of this testing procedure often limits the number of electron microscope calibrations

Method used

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  • Measuring and controlling aberrations in electron microscopes
  • Measuring and controlling aberrations in electron microscopes
  • Measuring and controlling aberrations in electron microscopes

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Embodiment Construction

[0015] Embodiments of the present invention provide systems and methods to measure spherical aberration and / or chromatic aberration in cathode lens electron microscopy (e.g., low energy electron microscopy (LEEM) and photoelectron emission microscopy (PEEM)), and thereby control spherical aberration and / or chromatic aberration or chromatic aberration. Utilizing the dispersion properties of the magnetic prism array, by placing a narrow slit aperture in the incident plane to the magnetic prism array, the energy and momentum projection in the dispersion contrast aperture plane of the microscope is formed. By scanning the contrast apertures in this dispersion plane and forming a real-space image for each contrast aperture position, the spherical aberration and chromatic aberration coefficients can be extracted from the image displacement from one aperture position to the next.

[0016] now refer to figure 1 , a schematic diagram of an exemplary electron microscope 100 is shown ac...

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Abstract

An electron microscope system and a method of measuring an aberration of the electron microscope system are disclosed. An aperture filters an electron beam at a diffraction plane of the electron microscope to pass through electrons having a selected energy and momentum. A displacement of an image of the passed electrons is measured at a detector in an image plane of the electron microscope. An aberration coefficient of the electron microscope is determined from the measured displacement and at least one of the energy and momentum of the passed electrons. The measured aberration can be used toalter a parameter of the electron microscope or an optical element of the electron microscope to thereby control the overall aberration of the electron microscope.

Description

technical field [0001] The present invention relates generally to controlling aberrations in imaging devices, and more particularly to systems and methods for measuring and controlling the amount of aberrations in electron microscopes. Background technique [0002] Electron microscopes use a beam of accelerated electrons to irradiate a sample under test to obtain high-resolution images of the sample. Electron microscopes tend to suffer from certain aberrations, such as chromatic aberration, spherical aberration, etc., due to the multiple optical elements used to direct the electron beam and form an image of the sample. While these optics can be adjusted to account for aberrations, aberrations must first be measured before they can be resolved. Measuring spherical aberration and chromatic aberration in low-energy electron microscopy (LEEM) or photoelectron emission microscopy (PEEM) is a time-consuming process that is time-consuming and difficult to automate. In one method ...

Claims

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Application Information

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IPC IPC(8): H01J37/05
CPCH01J37/292H01J37/153H01J2237/1534H01J2237/1508H01J37/145H01J37/1472H01J37/29H01J2237/2602
Inventor R·M·特朗普
Owner IBM CORP
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