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Highly stable perovskite quantum dot composite material and preparation method thereof

A composite material and quantum dot technology, which is applied in the field of perovskite quantum dot composite material Al2O3/CsPbX3 and its preparation, can solve the lack of detailed research on the stability improvement mechanism of semi-bare QDs and hinder the charge transfer of perovskite QDs and other semiconductors , affect photoelectric applications and other issues, to achieve the effect of highlighting water stability and thermal stability, excellent stability, and excellent luminous performance

Active Publication Date: 2020-10-30
HUNAN NORMAL UNIVERSITY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these strategies are far from perfect, and the potential disadvantages include: limited stability improvement, sacrificial PLQY, insulating protective shell, which will hinder the charge transfer between perovskite QDs and other semiconductors, and ultimately affect their optoelectronic performance. application
However, there is a lack of detailed studies on the stability improvement mechanism of semi-bare QDs

Method used

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  • Highly stable perovskite quantum dot composite material and preparation method thereof
  • Highly stable perovskite quantum dot composite material and preparation method thereof
  • Highly stable perovskite quantum dot composite material and preparation method thereof

Examples

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Effect test

example 1

[0023] Example 1: Preparation of Al 2 o 3 / CsPbCl 1.5 Br 1.5 composite material.

[0024] S1: 0.267g Cs 2 CO 3 , 10ml of octadecene and 1ml of oleic acid were placed in a 50ml three-neck flask. Under stirring at room temperature, pass 10minN 2 Afterwards, the temperature was raised to 120° C. and vacuum degassed for about 1 hour until no bubbles were generated. Next, pass N again 2 , while raising the temperature to 150°C, when Cs 2 CO 3 Cool to room temperature naturally after complete dissolution. Since cesium oleate will precipitate from octadecene at room temperature, it needs to be preheated to 100°C before use.

[0025] S2: 0.188mmol PbCl 2 , 0.188mmol PbBr 2 and 10ml of octadecene were placed in a 50ml three-neck flask. Under stirring at room temperature, pass 10minN 2 Afterwards, the temperature was raised to 120° C. and vacuum degassed for about 1 hour until no bubbles were generated. Next, pass N again 2 , inject 1ml each of oleic acid and oleylamine...

example 2

[0030] Example 2: Preparation of Al 2 o 3 / CsPbBr 3 composite material.

[0031] S1: 0.267g Cs 2 CO 3 , 10ml of octadecene and 1ml of oleic acid were placed in a 50ml three-neck flask. Under stirring at room temperature, pass through for 10min N 2 Afterwards, the temperature was raised to 120° C. and vacuum degassed for about 1 hour until no bubbles were generated. Next, pass N again 2 , while raising the temperature to 150°C, when Cs 2 CO 3 Cool to room temperature naturally after complete dissolution. Since cesium oleate will precipitate from octadecene at room temperature, it needs to be preheated to 100°C before use.

[0032] S2: 0.376mmol PbBr 2 and 10ml of octadecene were placed in a 50ml three-neck flask. Under stirring at room temperature, pass through for 10min N 2 Afterwards, the temperature was raised to 120° C. and vacuum degassed for about 1 hour until no bubbles were generated. Next, pass N again 2 , inject 1ml each of oleic acid and oleylamine. P...

example 3

[0037] Example 3: Preparation of Al 2 o 3 / CsPbBr 1.2 I 1.8 composite material.

[0038] S1: 0.267g Cs 2 CO 3 , 10ml of octadecene and 1ml of oleic acid were placed in a 50ml three-neck flask. Under stirring at room temperature, pass through for 10min N 2 Afterwards, the temperature was raised to 120° C. and vacuum degassed for about 1 hour until no bubbles were generated. Next, pass N again 2 , while raising the temperature to 150°C, when Cs 2 CO 3 Cool to room temperature naturally after complete dissolution. Since cesium oleate will precipitate from octadecene at room temperature, it needs to be preheated to 100°C before use.

[0039] S2: 0.150mmol PbBr 2 , 0.226 mmol PbI 2 and 10ml of octadecene were placed in a 50ml three-neck flask. Under stirring at room temperature, pass through for 10min N 2 Afterwards, the temperature was raised to 120° C. and vacuum degassed for about 1 hour until no bubbles were generated. Next, pass N again 2 , inject 1ml each of ...

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Abstract

The invention discloses a high-stability perovskite quantum dot composite material Al2O3 / CsPbX3 (wherein X is selected from the group consisting of Cl, Br, I, Cl / Br and Br / I) and a preparation methodthereof. According to the invention, Al2O3 is used as a matrix; Al2O3 and a quantum dot raw material may be added into a reactor together before quantum dot synthesis, or Al2O3 may be added into a synthesized quantum dot solution system; stirring is performed at room temperature to enable quantum dots to be fully adsorbed on the surface of Al2O3, then a mixed solution is centrifugally separated, an obtained precipitate is washed with methyl acetate or ethyl acetate, and then centrifugation is carried out again; and finally, the precipitate is dried to obtain the Al2O3 / CsPbX3 composite material. The method is simple to operate, has good market value and is easy to promote. After the Al2O3 / CsPbBr3 composite material is soaked in distilled water for two months, the Al2O3 / CsPbBr3 composite material still emits strong fluorescence under the excitation of ultraviolet light. In addition, the thermal stability of the Al2O3 / CsPbX3 composite material is also obviously superior to the thermal stability of CsPbX3 quantum dots. Such results show that the stability of the perovskite quantum dots is obviously improved as the perovskite quantum dots are adsorbed on the surface of Al2O3.

Description

technical field [0001] The invention relates to the field of materials science, more specifically to a highly stable perovskite quantum dot composite material Al 2 o 3 / CsPbX 3 (X=Cl, Br, I, Cl / Br and Br / I) and methods for their preparation. Background technique [0002] In recent years, among all kinds of optoelectronic materials, perovskite quantum dots stand out for their excellent performance. Compared with organic-inorganic hybrid perovskite quantum dots, all-inorganic perovskite quantum dots (IPQDs) have higher stability. IPQDs have attracted much attention due to their high light absorption coefficient, narrow emission spectrum, high photoluminescence quantum yield (PLQY), tunable composition and size, tunable emission spectrum, and photoluminescence and electroluminescence. These characteristics make it one of the most potential optoelectronic materials currently, widely used in light-emitting diodes (LEDs), solar cells, photodetectors, lasers and other fields. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/66C09K11/02B82Y20/00B82Y40/00
CPCB82Y20/00B82Y40/00C09K11/025C09K11/665
Inventor 周文理王恩胜廉世勋张瑞勤
Owner HUNAN NORMAL UNIVERSITY