A control method, device and storage medium of a three-dimensional memory

Abstract

Embodiments of the present invention provide a control method, device and storage medium for a three-dimensional memory. Wherein, the method includes: determining to perform a read operation on the selected first word line; the selected first word line is at least one of a plurality of word lines in the three-dimensional memory; Apply a first voltage on the upper; wherein, the first voltage is used to turn on the memory cell transistor on the first word line; the first voltage is higher than the second voltage; the second voltage is determined for the division When other word lines other than the first word line perform read operations, the voltage applied on the other word lines; the second voltage is used to turn on the memory cell transistors on the other word lines. In the embodiment of the present invention, when the read operation is performed on the first word line, the read-on voltage on the first word line selected in the three-dimensional memory is increased to increase the voltage flowing through the memory cell transistor on the first word line. current, thereby increasing the channel current in three-dimensional memory.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a control method, device and storage medium of a three-dimensional memory. Background technique [0002] In recent years, the development of flash memory (expressed as Flash Memory in English) is particularly rapid. The main feature of flash memory (referred to as memory in the following description) is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. Therefore, it has been widely used in many fields such as microcomputer and automatic control. Moreover, in order to adapt to the current increasing amount of data storage in various fields, the capacity of the memory is also increasing. [0003] In the related technology, two-dimensional (2D, 2 Dimensions) memory shrinks the storage unit tube (expressed in English as cell, where the storage unit tube...

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Problems solved by technology

[0004] However, there are various challenges in 3D memory technology, for example, there is a rapid drop in channel current as the number of layers continues to increase

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