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A kind of integrated cmos detector and preparation technology

A detector and circuit technology, applied in the field of integrated CMOS detectors and fabrication processes, can solve problems such as incompatibility of Si-based CMOS circuit processes, and achieve the effects of easy implementation, mature growth process and low cost

Active Publication Date: 2020-12-22
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Aiming at the technical problem that the materials of the detectors in the prior art are grown under high temperature conditions with expensive equipment and cannot be compatible with Si-based CMOS circuit technology, the purpose of the present invention is to provide a CMOS single-chip detector with an integrated CMOS wide-band Detector array and fabrication process

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  • A kind of integrated cmos detector and preparation technology
  • A kind of integrated cmos detector and preparation technology
  • A kind of integrated cmos detector and preparation technology

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Experimental program
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Embodiment 1

[0033] A CMOS single-chip detector in this embodiment includes a silicon substrate 1 and an insulating layer 2 from bottom to top. A CMOS circuit 3 is formed on the insulating layer 2. The CMOS circuit 3 is composed of a symmetrical NMOS circuit and a PMOS circuit. A lead-out electrode 4 is formed on the circuit and the PMOS circuit, and a pair of interdigital electrodes 5 are formed in the area between the NMOS circuit and the PMOS circuit, including a left interdigital electrode and a right interdigital electrode, and the interdigital electrodes 5 are located on the insulating layer 2. On the upper surface, the extraction electrode 4 is interconnected with the interdigital electrode 5, and the top of the interdigital electrode 5 is covered with Al x Ga y In 2-x-y o 3 active layer 6.

[0034] The preparation process of the above-mentioned CMOS single-chip detector comprises the following steps:

[0035] (1) Select plane (110) silicon as the substrate, with a thickness of ...

Embodiment 2

[0041] This embodiment is an integrated CMOS wide-band detector array, which includes a silicon substrate 1 and an insulating layer 2 from bottom to top, a CMOS circuit 3 is formed on the insulating layer 2, an extraction electrode 4 is formed on the CMOS circuit 3, and the CMOS circuit 3 The interdigital electrode array 5 is formed in the area between, and the interdigital electrode array 5 is located on the upper surface of the insulating layer 2. The interdigital electrode array 5 is a 2*2 square matrix module, and the lead-out electrodes 4 are interconnected with the interdigital electrodes. The electrode array 5 is divided into four regions, and the upper parts of the four regions are covered with Al x Ga y In 2-x-y o 3 active layer 6.

[0042] By adjusting the composition of Al, Ga, In elements, and Al x Ga y In 2-x-y o 3 The growth position of the material can realize the detection of different wavelengths of light in different regions, and realize the detection ...

Embodiment 3

[0055] In this embodiment, a preparation process of an integrated CMOS broadband detector array comprises the following steps:

[0056] (1) Select plane (110) silicon as the substrate, with a thickness of about 400 μm. A silicon oxide insulating layer is formed on the surface of the silicon substrate, and photoresist is spin-coated on the insulating layer, and then photolithography, thermal diffusion and other processes are performed. CMOS circuit and lead-out electrodes;

[0057] (2) Perform photolithography on the structure obtained in step (1), cover part of the CMOS circuit area with photoresist, and expose the designed 4 Al x Ga y In 2-x-y o 3 4 of the active layer material growth regions;

[0058] (3) Make an array of interdigitated electrodes on the exposed area of ​​the structure obtained in step (2). The interdigitated electrodes are located on the upper surface of the insulating layer. The array of interdigitated electrodes is a 2*2 square matrix module, and Ni / A...

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Abstract

The invention discloses an integrated CMOS detector and a preparation process thereof, and belongs to the technical field of semiconductors. The device has a simple preparation process. The growth process of a AlxGayIn2-x-yO3 active layer is mature, low in cost and easy to implement and can be popularized on a large scale. The AlxGayIn2-x-yO3 material is directly grown on a Si substrate on which aCMOS circuit and a lead-out electrode are prepared in advance by a method compatible with the Si-based CMOS growth process to be used as the active layer of the detector. An interdigital electrode isprepared to be interconnected with the lead-out electrode of the Si substrate, and the interdigital electrode is arranged under the AlxGayIn2-x-yO3 active layer material. The incident light enters from the upper part of the AlxGayIn2-x-yO3 active layer material, i.e. the incident light enters back to the interdigital electrode so as to avoid the absorption of light by the interdigital electrode.The AlxGayIn2-x-yO3 material system is selected and the integrated CMOS single chip wide band detector array can be realized by further adjusting the composition of Al, Ga and In and the growth position of the AlxGayIn2-x-yO3 material.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an integrated CMOS detector and a preparation process. Background technique [0002] A photodetector is a sensor that converts one form of electromagnetic radiation signal into another signal form that is easily received and processed. Photodetectors in different wavebands have different uses. For example, ultraviolet detectors can be used in nuclear radiation pollution monitoring, ozone monitoring, air pollution monitoring, space ultraviolet radiation research, aircraft guidance, blood analysis, ultraviolet disinfection monitoring and other fields. Visible light detectors have important applications in visible light communication. Infrared detectors have important applications in infrared communication and biological monitoring. The manufacturing process of the MSM type detector is simple, and the dark current is small, but when the incident light is normal ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/16H01L31/02H01L31/0224
CPCH01L25/167H01L31/02005H01L31/022408
Inventor 汪炼成朱文辉李滔龙林云
Owner CENT SOUTH UNIV