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Semiconductor laser element

A technology of laser components and semiconductors, applied in the direction of semiconductor lasers, laser components, lasers, etc., can solve problems such as no solutions, and achieve the effect of increasing the working temperature

Active Publication Date: 2019-12-17
SHARP FUKUYAMA LASER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The semiconductor laser element described in Japanese Patent Laid-Open No. 2006-128189 has only recesses on the upper surface of the ridge, and does not propose a solution to the problems of the present invention

Method used

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  • Semiconductor laser element
  • Semiconductor laser element
  • Semiconductor laser element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] figure 1 It is a plan view schematically showing the semiconductor laser element 100A of the first embodiment. In addition, in figure 1 In, SiO is omitted 2 Illustration of membrane 111 and TiAu / Au plated electrode 112. figure 2 is along figure 1 A schematic cross-sectional view of the semiconductor laser element 100A of the first embodiment taken along the line A-A shown. image 3 is along figure 1 A schematic cross-sectional view of the semiconductor laser element 100A of the first embodiment taken along the line B-B shown.

[0041] Figure 4 It shows the semiconductor laser element 100A of the first embodiment viewed obliquely from above. figure 1 A perspective view of the region α shown.

[0042] Such as figure 1 and figure 2 As shown, on the basis of n-type GaAs substrate 101, semiconductor laser element 100A also includes: n-type GaInP buffer layer 102 formed on n-type GaAs substrate 101 by metal-organic vapor phase epitaxy, n-type AlGaInP first ...

Embodiment 2

[0057] Figure 5 It is a schematic plan view schematically showing an example of the semiconductor laser element 100B of the second embodiment.

[0058] The epitaxial structure of the semiconductor laser element 100B of the second embodiment is substantially the same as the epitaxial structure of the semiconductor laser element 100A of the first embodiment. The semiconductor laser element 100B of the second embodiment is manufactured by the same manufacturing process as that of the first embodiment.

[0059] In the second embodiment, in the semiconductor laser element 100B, the resonator length is 1500 μm, the chip width is 110 μm, and the width H of the ridge 151 is 1.7 μm. In addition, in the semiconductor laser element 100B, the terrace portions 152 , 153 are separately provided in the resonator direction R in a plurality (three in this example) of separation stages 1521 to 1523 and 1531 to 1533 . Separation stages 1521 to 1523 and 1531 to 1533 are formed at a predetermin...

Embodiment 3

[0063] Figure 6 It is a schematic plan view schematically showing an example of the semiconductor laser element 100C of the third embodiment.

[0064] The epitaxial structure of the semiconductor laser element 100C of the third embodiment is substantially the same as the epitaxial structure of the semiconductor laser element 100A of the first embodiment. The semiconductor laser element 100C of the third embodiment is manufactured by the same manufacturing process as that of the first embodiment.

[0065] In the third embodiment, in the semiconductor laser element 100C, the resonator length is 800 μm, the chip width is 110 μm, and the width of the ridge 151 is 2.0 μm. In the semiconductor laser element 100C, the terrace portions 152 , 153 are provided at four corners of corner portions where one side along the resonator direction R intersects one side along the width direction T. The terrace portions 152, 153 are formed in a triangular shape such that the apex corners are al...

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PUM

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Abstract

A semiconductor laser element that includes a stripe-shaped light-emitting region and that is formed by adhering a surface of the semiconductor laser element on a side opposite to a semiconductor substrate and a submount to each other by a solder layer includes a terrace section on a surface of the semiconductor laser element that is adhered by the solder layer, the terrace section being separatedfrom a ridge portion, which is a current-carrying portion, by a grooved portion. A top surface of a region including the grooved portion is covered by a metal. The terrace section is divided into a plurality of portions that are disposed in a scattered manner.

Description

technical field [0001] The present invention relates to a semiconductor laser element, for example, a semiconductor laser element that operates at high temperature or high output. Background technique [0002] Conventionally, as a semiconductor laser element used as a light source for reading or writing information on a DVD (Digital Versatile Disc), for example, there is a semiconductor laser element described in Japanese Patent Laid-Open No. 2002-9382. [0003] Figure 8A and 8B It is an explanatory diagram for explaining an example of a conventional semiconductor laser element 1000 . Figure 8A It is a plan view schematically showing a conventional semiconductor laser element 1000 . Figure 8B is along Figure 8A A schematic cross-sectional view of a conventional semiconductor laser device 1000 taken along line C-C is shown. In addition, in Figure 8A In, SiO is omitted 2 Illustration of membrane 1011 and TiAu / Au plated electrode 1012. [0004] The semiconductor laser ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/223H01S5/022
CPCH01S5/2238H01S5/0237H01S5/02461H01S5/22H01S5/34326H01S5/04252H01S5/0234H01S5/2202H01S2304/04
Inventor 菅康夫曾我部隆一
Owner SHARP FUKUYAMA LASER CO LTD
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