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Array substrate and preparation method thereof

A technology for array substrates and base substrates, applied in the field of array substrates and their preparation, can solve the problems of difficult scheduling, long production cycle, and large number of manufacturing processes, so as to improve product production efficiency, simplify the preparation process, and omit The effect of etching process

Inactive Publication Date: 2019-12-24
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The manufacturing process of the above-mentioned thin film transistor array substrate includes multiple patterning processes, and the number of manufacturing processes is large and complex, which makes the product production cycle long and difficult to schedule, resulting in high cost.

Method used

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  • Array substrate and preparation method thereof
  • Array substrate and preparation method thereof
  • Array substrate and preparation method thereof

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Embodiment Construction

[0030] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work shall fall within the protection scope of the present invention.

[0031] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " The orientation or positional relationship indicated by “rear”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inner” and “outer” are based on the orientation shown in the drawings Or the positional relationship is only for the convenience of de...

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Abstract

The embodiment of the invention discloses an array substrate and a preparation method thereof. Compared with a traditional preparation process, the preparation method is characterized in that a firstplating layer is prepared first, and then a first photoresist is prepared on the plating layer. The preparation method provided by the invention comprises the steps that a first photoresist layer is first prepared on a base substrate, and the first photoresist layer is patterned; and the first plating layer is prepared on the patterned first photoresist layer. On the basis of the existing process,the order of preparing the thin film transistor plating layer and the photoresist is adjusted. The first plating layer can be directly patterned, which eliminates an etching process in which the first plating layer is patterned in later stages. The etching process in a patterning process is eliminated. The preparation process is simplified. The product production efficiency is effectively improved. The cost is reduced.

Description

Technical field [0001] The invention relates to the field of display technology, in particular to an array substrate and a preparation method thereof. Background technique [0002] In the field of thin-film transistor liquid crystal displays and Active Matrix Organic Light Emitting Diode (AMOLED) displays, oxide semiconductor materials represented by indium gallium zinc oxide (IGZO) have become hot spots. At present, the structure of IGZO thin film transistor array substrate mainly includes three types: etch stop type, back channel etch type and coplanar type. Among them, the simpler manufacturing process is the etch stop type. The etch stop layer on IGZO can be When the source and drain electrodes (S / D) are formed, the IGZO layer is protected from damage, thereby improving the performance of IGZO. The material of the etching barrier layer is generally SiN x Or SiO x . However, the formation of the etching barrier layer requires an additional photolithography process, which incr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/1288H01L27/127H01L27/1225H01L21/0272H01L21/31133
Inventor 刘汉辰
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD