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Integrated circuit, semiconductor device and method of manufacturing the same

A technology of integrated circuits and semiconductors, used in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc.

Active Publication Date: 2022-03-22
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are many challenges associated with 3DIC

Method used

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  • Integrated circuit, semiconductor device and method of manufacturing the same
  • Integrated circuit, semiconductor device and method of manufacturing the same
  • Integrated circuit, semiconductor device and method of manufacturing the same

Examples

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Embodiment Construction

[0033] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components, materials, values, steps, arrangements, etc. are described below to simplify the present invention. Of course, these are examples only and are not intended to limit the invention. Include other components, materials, values, steps, arrangements, etc. For example, in the following description, forming a first component on or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which an additional component may be formed between the first component and the second component. components so that the first component and the second component may not be in direct contact with each other. In addition, the present invention may repeat reference numerals and / or characters in various embodimen...

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Abstract

Embodiments of the present invention provide a semiconductor device, an integrated circuit and a method for forming the same. The integrated circuit includes a first semiconductor wafer, a second semiconductor wafer, a first interconnect structure, an inductor, a second interconnect structure, and a through substrate via. The first semiconductor wafer has first devices on the front side of the first semiconductor wafer. A second semiconductor wafer is bonded to the first semiconductor wafer. The first interconnect structure is located under the backside of the first semiconductor wafer. An inductor is located under the first semiconductor die, and at least a portion of the inductor is located within the first interconnect structure. A second interconnect structure is located on the front side of the first semiconductor wafer. The through substrate via extends through the first semiconductor wafer. The inductor is connected to at least the first device through the second interconnect structure and the through-substrate via.

Description

technical field [0001] Embodiments of the present invention generally relate to the field of semiconductors, and more specifically, to integrated circuits, semiconductor devices and manufacturing methods thereof. Background technique [0002] Semiconductor devices are used in various electronic applications such as personal computers, cell phones, digital cameras, and other electronic equipment. Semiconductor devices are typically fabricated by sequentially depositing insulating or dielectric layers, conductive layers, and layers of semiconducting material over a semiconductor substrate and patterning the individual material layers using photolithography to form circuit components and elements on the individual material layers. Many integrated circuits are typically fabricated on a single semiconductor wafer, and the individual dies on the wafer are singulated by sawing between the integrated circuits along scribe lines. For example, individual dies are typically individual...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L23/528H01L27/04H01L21/48H10N97/00
CPCH01L27/04H01L23/5226H01L23/528H01L21/4814H01L28/10H01L23/5227H01L23/481H01L2225/06524H01L2225/06531H01L2225/06541H01L2924/37001H01L25/50H01L2224/08145H01L2224/13023H01L2224/05568H01L2224/0401H01L2224/13111H01L2224/13116H01L2224/13113H01L2224/13139H01L2224/13147H01L2224/13155H01L2224/05647H01L2224/05666H01L2224/05681H01L2224/05686H01L24/13H01L24/05H01L2924/014H01L2924/00014H01L2924/04941H01L2924/04953H01L25/073H01L23/645H01L25/0657H01L23/49827H01L23/485H01L24/11H01L24/12H01L24/27H01L24/28H01L2021/60022H01L24/32H01L21/76898H01L2224/83896H01L2924/19042H01L24/83H01L23/5389H01L2924/1206H01L23/5383H01L21/486H01L23/5385H01L23/5384H01L23/5386
Inventor 陈致霖刘钦洲张丰愿李惠宇黄博祥
Owner TAIWAN SEMICON MFG CO LTD