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A plasma processing device and its adjustment method

A plasma and processing device technology, applied in the field of plasma processing devices and its adjustment, can solve the problems of poor etching alignment in the edge area of ​​the substrate to be processed, difficulty in adjusting the height of the focus ring, and etching alignment at the edge of the substrate to be processed. Difficult to adjust online and other issues

Active Publication Date: 2020-02-21
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The height of the surface of the focus ring is reduced, so that the plasma sheath above the focus ring moves down, and the etching alignment of the edge area of ​​the substrate to be processed is poor
However, unless the focus ring is replaced with a new one, it is difficult to adjust the height of the focus ring in the existing plasma processing device, making it difficult to adjust the alignment of the edge of the substrate to be processed on-line

Method used

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  • A plasma processing device and its adjustment method
  • A plasma processing device and its adjustment method
  • A plasma processing device and its adjustment method

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Embodiment Construction

[0031] As described in the background art, it is difficult for the existing plasma processing device to adjust the alignment of the edge etching of the substrate to be processed. In order to solve the above technical problem, the technical solution of the present invention provides a plasma processing device, including: a processing chamber; The base is located at the bottom of the processing chamber; the electrostatic chuck is located on the base and is used to carry and adsorb the substrate to be processed; the focus ring surrounds the electrostatic chuck; the heat conduction ring is located at the focus Below the ring and surrounding the base; an expandable member connected to the heat conduction ring, the expandable member comprising a material with a high thermal expansion coefficient, a first fluid groove in the expandable member, the first fluid The groove is used to contain the first fluid. The plasma processing device can dynamically adjust the etching collimation of t...

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Abstract

A plasma processing device and its adjustment method, wherein the plasma processing device comprises: a processing chamber; a base located at the bottom of the processing chamber; an electrostatic chuck located on the base for carrying and absorbing The substrate to be processed; the focus ring surrounds the electrostatic chuck; the heat conduction ring is located below the focus ring and surrounds the base; the expandable member is fixed on the bottom of the processing chamber and connected to the heat conduction ring , the expandable member includes a material with a high thermal expansion coefficient, the expandable member has a first fluid groove inside, the first fluid groove is used to accommodate the first fluid, and the temperature of the first fluid is changed so that the expandable The expansion member expands or contracts, and changes the height of the focus ring by driving the heat conduction ring to move in a direction perpendicular to the surface of the electrostatic chuck. The plasma processing device can dynamically adjust the collimation of the edge etching of the substrate to be processed.

Description

Technical field [0001] The invention relates to the field of semiconductors, in particular to a plasma processing device and an adjustment method thereof. Background technique [0002] Existing plasma processing equipment includes capacitively coupled plasma etching equipment (CCP) and inductively coupled plasma etching equipment (ICP). Because the inductively coupled plasma (ICP) etching device and the capacitively coupled plasma (CCP) etching device are simple in structure and relatively cheap, they are widely used in the field of dry etching. [0003] The plasma density distribution in the plasma processing device is directly proportional to the etching rate of the substrate to be processed. The higher the plasma density, the higher the etching rate, and the lower the plasma density, the lower the etching rate. Due to the action of the plasma gas flow, the plasma density in the central area of ​​the substrate to be processed decreases, and the plasma density at the edge of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32H01L21/67
CPCH01J37/32091H01J37/321H01J37/32431H01J37/32642H01L21/67069H01J2237/334H01J37/32724H01L21/6833H01J37/3244H01J37/32238H01J2237/3341
Inventor 涂乐义
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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