Guided inspection of a semiconductor wafer based on systematic defects

Abstract

A candidate defect may be identified at a semiconductor wafer. A determination may be made as to whether the candidate defect at the semiconductor wafer corresponds to a systematic defect or a randomdefect. In response to determining that the candidate defect at the semiconductor wafer corresponds to a systematic detect, the candidate defect at the semiconductor wafer may be provided to a defectreview tool for review by the defect review tool.

Description

technical field [0001] The present disclosure relates generally to guided inspection, and more particularly to systematic defect-based guided inspection of semiconductor wafers. Background technique [0002] The fabrication of semiconductor devices can take advantage of submicron features associated with very large scale integration. Such fabrication processes may require formation of semiconductor device features with high precision and uniformity, which may necessitate careful monitoring of the fabrication process. For example, frequent and detailed inspections of semiconductor wafers may be performed to detect defects in the semiconductor wafers. The detailed inspection may correspond to the analysis of inspection images of the semiconductor wafer. Contents of the invention [0003] The following is a brief summary of the disclosure in order to provide a basic understanding of some aspects of the disclosure. This summary is not an extensive overview of the disclosure...

AI Technical Summary

Problems solved by technology

This fabrication process may require forming semiconductor device features with high precision and uniformity, which may necessitate careful monitoring of the fabrication process

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