Semiconductor structure and manufacturing process thereof

Abstract

The invention provides a semiconductor structure and a manufacturing process thereof. The manufacturing process of the semiconductor structure comprises the following steps of: forming a substrate structure comprising a channel hole, forming a preliminary charge trapping layer in the channel hole, and performing predetermined processing on the preliminary charge trapping layer such that the preliminary charge trapping layer forms a charge trapping layer, the trap density of the charge trapping layer being greater than the trap density of the preliminary charge trapping layer. According to theabove manufacturing method, the preliminary charge trapping layer is formed in the channel, then the preliminary charge trapping layer is subjected to predetermined processing, and a part of materialsin the preliminary charge trapping layer form traps, so that the number of the traps in the formed charge trapping layer is greater than the number of the traps in the preliminary charge trapping layer. According to the manufacturing method, the number of the traps in the charge trapping layer is large, the problem that the number of the traps in the charge trapping layer in the prior art is small is solved, a memory window of the device is ensured to be relatively large, and the device is ensured to have good performance.

Description

technical field [0001] The present application relates to the field of semiconductors, and in particular, to a semiconductor structure and a manufacturing process thereof. Background technique [0002] In the prior art, many are usually charge trap type memories, that is, their structures include a charge trapping layer, and the charge trapping layer is often formed by depositing complex Si-N-O materials. [0003] At present, the density of traps in the charge trapping layer is relatively small, so that the memory window of the memory is small, and the performance including reliability of the memory is poor. [0004] The above information disclosed in the Background section is only to enhance the understanding of the background of the technology described herein, therefore, the Background may contain certain information which is not formed in the country for those skilled in the art. known prior art. Contents of the invention [0005] The main purpose of the present appl...

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Problems solved by technology

[0005] The main purpose of the present application is to provide a semiconductor structure and its manufacturing process, to solve the problem that the density of traps in the charge trapping layer in the semiconductor device in the prior art is small

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