Film-formation device and film-formation method
A film-forming device and film-forming method are applied in ion implantation plating, cable/conductor manufacturing, coating and other directions, which can solve the problems of film quality fluctuation and water vapor partial pressure instability of transparent conductive films, and achieve the The effect of stable vapor partial pressure and film quality
Active Publication Date: 2020-01-10
ULVAC INC
View PDF12 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] Therefore, in the actual film forming process, sometimes the water vapor partial pressure in the treatment chamber is unstable, and the film quality of the transparent conductive film fluctuates every time the film is formed.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0038] Hereinafter, embodiments of the present invention will be described with reference to the drawings. XYZ axis coordinates are sometimes introduced in each drawing.
[0039] figure 1 It is a schematic sectional view of the film formation apparatus of this embodiment.
[0040] figure 1 The shown film formation apparatus 101 has a vacuum vessel 10 , a substrate transport mechanism 20 , a film formation source 30 , a gas supply source 70 , a pressure gauge 75 , and a control device 80 .
[0041] The vacuum vessel 10 has a first vacuum chamber 11 , a second vacuum chamber 12 , and a third vacuum chamber 13 . exist figure 1In , a part of the second vacuum chamber 12 and the third vacuum chamber 13 are each shown. In addition, the number of vacuum chambers is not limited to three, and may be two or less or four or more.
[0042] Each of the first vacuum chamber 11, the second vacuum chamber 12, and the third vacuum chamber 13 can maintain a reduced pressure state. For ex...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention is to stabilize water vapor partial pressure and further stabilize the film quality of a transparent conductive film. A film formation device comprises a first vacuum chamber, a gas supply source, a film formation source, and a control device. In the first vacuum chamber, a reduced pressure state is maintained and a carrier for holding a substrate can be transported in and out. The gas supply source is capable of supplying a water vapor gas to the first chamber. The film formation source is disposed in the first vacuum chamber and is capable of generating a material of a transparent conductive film formed on the substrate. When the transparent conductive film is to be formed on the substrate, the control device controls the range of the water vapor partial pressure of the first vacuum chamber between a first partial pressure or higher and a second partial pressure or lower, which is higher than the first partial pressure.
Description
technical field [0001] The invention relates to a film forming device and a film forming method. Background technique [0002] In forming a transparent conductive film used for a touch panel or the like, a sputtering method excellent in large-area film formation, film quality control, and the like is generally used. In the sputtering method, in order to suppress oxygen deficiency of the transparent conductive film, oxygen gas may be introduced into the vacuum vessel (see, for example, Patent Document 1). [0003] However, in an actual film forming process, gases other than the introduced gas also exist in the vacuum container. As such gas, water vapor is mentioned. For example, water vapor is released from components provided on the inner wall of the processing chamber, the vacuum chamber. For water vapor, sufficient degassing treatment is performed by drying the vacuum vessel in advance while exhausting it, or performing a pre-discharge before film formation. [0004] H...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34H01B13/00
CPCC23C14/34H01B13/00C23C14/0042C23C14/086C23C14/228C23C14/3464C23C14/54C23C14/568
Inventor 须田具和高桥明久织井雄一箱守宗人
Owner ULVAC INC