A kind of preparation method of perovskite single crystal

A technology of perovskite and single crystal, which is applied in the field of preparation of perovskite single crystal, which can solve the problems of single crystal composition control and other problems, and achieve the effect of low raw material price, convenient supply of raw materials, and no danger

Active Publication Date: 2021-08-06
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the composition of the final single crystal cannot be controlled during the growth process.

Method used

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  • A kind of preparation method of perovskite single crystal
  • A kind of preparation method of perovskite single crystal
  • A kind of preparation method of perovskite single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] CsPb with an average side length of 120µm 2 Br 5 Fabrication of Perovskite Single Wafers

[0024] 1) The silica substrate was ultrasonically cleaned with acetone, 70% ethanol and deionized water for 20 minutes respectively; then placed in an oven at 60°C for overnight drying;

[0025] 2) In 5mL hydrobromic acid, the concentration of CsBr is 0.06mol / L, PbBr 2 The concentration is 0.12mol / L, and the precursor solution of perovskite is configured;

[0026] 3) Heat the perovskite precursor solution to 90 °C, and drop 10 μL on the silica substrate. Then put it in the air and dry it to get CsPb with an average side length of 120µm 2 Br 5 Perovskite single crystal.

[0027] figure 1 CsPb in this example 2 Br 5 Micrograph of a perovskite single wafer. Such as figure 1 Shown, CsPb 2 Br 5 The perovskite single crystals are uniform in size with an average side length of 120 µm. Such as figure 2 Shown is the XRD pattern of a CsPb2Br5 perovskite single wafer, and the...

Embodiment 2

[0029] CsPbBr with an average length of 150 µm 3 Preparation of Perovskite Single Crystal Rods

[0030] 1) The silica substrate was ultrasonically cleaned with acetone, 75% ethanol and deionized water for 25 minutes respectively; then placed in an oven at 70°C for overnight drying;

[0031] 2) In 5mL dimethyl sulfoxide, the concentration of CsBr is 0.06mol / L, PbBr 2 Concentration is 0.12mol / L, obtains the precursor solution of perovskite;

[0032] 3) Heat the perovskite precursor solution to 90 °C, and drop 10 μL on the silica substrate. After drying in the atmosphere, a CsPbBr with a length of 150 µm was obtained. 3 Perovskite single crystal rods.

[0033] image 3 CsPbBr in this example 3 A micrograph of a perovskite single crystal rod, as figure 2 Shown, CsPbBr 3 The perovskite single crystal rods are uniform in size with an average length of 150 µm.

Embodiment 3

[0035] CsPbBr with a size of 95 µm 3 Fabrication of Perovskite Single Wafers

[0036] 1) The silica substrate was ultrasonically cleaned with acetone, 75% ethanol and deionized water for 25 minutes respectively; then dried with nitrogen and placed in an oven at 65°C overnight for later use;

[0037] 2) In 5mL dimethyl sulfoxide, the concentration of CsBr is 0.06mol / L, PbBr 2 Concentration is 0.12mol / L, obtains the precursor solution of perovskite;

[0038] 3) Heat the perovskite precursor solution to 90 °C, and drop 10 μL on the silica substrate. Then heat and dry at 50°C to obtain CsPbBr with a side length of 95µm 3 Perovskite single crystal.

[0039] Figure 4 CsPbBr in this example 3 Micrograph of a perovskite single wafer. Such as Figure 4 Shown, CsPbBr 3 The perovskite single crystal is uniform in size, with a size of 95 µm.

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Abstract

The invention discloses a method for preparing a perovskite single crystal, and the perovskite single crystal is CsPbBr 3 Perovskite single crystal or CsPb 2 Br 5 Perovskite single crystal, the shape of the perovskite single crystal is flake or rod, and the preparation method includes the following steps: cleaning the single crystal growth substrate: washing the substrate with acetone, 70%~80% ethanol and deionized Sonicate the water for 15-30 minutes, take it out and dry it in an oven overnight to obtain a single crystal growth substrate; prepare the perovskite precursor solution: CsBr and PbBr 2 Dissolve in hydrobromic acid or dimethyl sulfoxide at a ratio of 1 / 1~1 / 4, CsBr concentration is 0.06mol / L~0.3mol / L, PbBr 2 The concentration is 0.06mol / L~0.3mol / L to obtain the perovskite precursor solution; 3) Preparation of perovskite single crystal: Preheat the perovskite precursor solution to 80~95°C and drop it on the substrate. The solvent was removed to obtain a perovskite single crystal. The method is simple to operate, low in difficulty in the operation process, and the composition and morphology of the perovskite single crystal can be adjusted.

Description

technical field [0001] The invention relates to a method for preparing a perovskite single crystal, belonging to the technical field of perovskite single crystal growth and shape control engineering. Background technique [0002] Lead-based perovskites have high absorption coefficient and strong defect tolerance in the visible light band, so they have high application value in photoelectric conversion devices such as solar cells or photodetectors. The flat crystal plane spontaneously formed during the growth process of the single crystal itself has good compactness and thickness uniformity, so it can obtain a lower defect state density and a longer carrier lifetime than quantum dots. At present, the growth methods of single crystals have been reported. However, its growth process is highly random, and the morphology of the final single crystal is uncontrollable. There are also related reports on the growth method of perovskite single crystals with different components form...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B7/06C30B29/12
CPCC30B7/06C30B29/12
Inventor 王春雷瞿俊峰徐淑宏
Owner SOUTHEAST UNIV
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