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A kind of metal tungsten deposition method and metal tungsten deposition structure

A deposition method, a technology of metal tungsten, which is applied in metal material coating process, semiconductor/solid-state device parts, coating, etc., can solve the problems of high resistivity and stress, poor purity of tungsten layer, high fluorine content, etc., and achieve improvement Density, save process time, reduce the effect of impurity content

Active Publication Date: 2022-01-07
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, under low temperature conditions, the formed metal tungsten usually has smaller grains, higher resistivity and stress; the reaction gas used in the deposition process is tungsten hexafluoride (WF 6 ) When tungsten grows, the fluorine element in it is easy to accumulate in the grain boundary of metal tungsten grains and cannot escape, the fluorine content is high, and the deposited tungsten layer has poor purity

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  • A kind of metal tungsten deposition method and metal tungsten deposition structure
  • A kind of metal tungsten deposition method and metal tungsten deposition structure
  • A kind of metal tungsten deposition method and metal tungsten deposition structure

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Embodiment Construction

[0028] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the specific embodiments set forth herein. On the contrary, these embodiments are provided for a more thorough understanding of the present invention and to fully convey the scope of the disclosure of the present invention to those skilled in the art.

[0029] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are no...

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Abstract

The embodiment of the present invention discloses a metal tungsten deposition method, the method comprising: forming a tungsten nucleation layer; depositing a first tungsten growth layer based on the tungsten nucleation layer; performing an annealing process on the first tungsten growth layer ; Depositing a second tungsten growth layer on the annealed first tungsten growth layer. The embodiment of the invention also discloses a metal tungsten deposition structure formed based on the deposition method.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a metal tungsten deposition method and a metal tungsten deposition structure. Background technique [0002] In the manufacturing process of semiconductor devices, metal tungsten (W) has wide application significance as a filling material for wires and contact vias. For example, in the preparation process of storage devices such as Dynamic Random Access Memory (DRAM) and three-dimensional NAND flash memory (3D NAND flash) devices, metal tungsten materials are widely used in the interconnection structure after the copper process. [0003] In the existing process, in order to achieve good filling performance, metal tungsten is generally formed by chemical vapor deposition in a low-temperature environment. However, under low temperature conditions, the metal tungsten formed usually has smaller grains, higher resistivity and stress; the reaction gas used in the deposition proc...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/14C23C16/56H01L21/768H01L23/532
CPCC23C16/14C23C16/56H01L21/76838H01L21/76876H01L23/53257
Inventor 熊少游程磊詹侃周烽左明光
Owner YANGTZE MEMORY TECH CO LTD