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A three-dimensional heterogeneous module welding method

A welding method and module technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of only returning to the factory for maintenance, module impact, scrapping, etc., and achieve the effect of reducing follow-up maintenance costs and prolonging service life.

Active Publication Date: 2021-08-31
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In practical applications, radio frequency integrated circuit modules are placed in groups to realize multi-channel radio frequency modules to serve terminals. For ultra-high-density channel modules, if an independent unit is abnormal during use, the entire module will be affected
For tens of thousands of RF modules like phased array radar, when the number of abnormal modules reaches a certain ratio, they can only be returned to the factory for maintenance or scrapped

Method used

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  • A three-dimensional heterogeneous module welding method
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  • A three-dimensional heterogeneous module welding method

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Embodiment 1

[0035] like Figure 1 to Figure 7 As shown, a three-dimensional heterogeneous module welding method specifically includes the following steps:

[0036] 101) The radio frequency module manufacturing step: on the upper surface of the radio frequency carrier board 101, a chip slot for placing the radio frequency chip is made. The chip slot is generally square, with a range of 1um to 5cm and a depth of 10um to 1000um. Deposit silicon oxide or silicon nitride on the surface of the radio frequency carrier 101, or directly thermally oxidize to form an insulating layer, and form a seed layer on the insulating layer by physical sputtering, magnetron sputtering or evaporation process. The thickness of the insulating layer ranges from 10nm to 100um, and the thickness of the seed layer ranges from 1nm to 100um. This size is used unless otherwise specified in the follow-up; the structure of the seed layer itself can be a single layer or a multilayer structure, and its material can be titan...

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Abstract

The invention discloses a three-dimensional heterogeneous module welding method, which specifically includes the following steps: 101) radio frequency module manufacturing step, 102) base module manufacturing step, 103) bonding to form a functional module step, 104) replacement bonding Steps; the present invention provides a three-dimensional heterogeneous module welding method for quickly replacing damaged module chips.

Description

technical field [0001] The invention relates to the technical field of semiconductors, more specifically, it relates to a three-dimensional heterogeneous module welding method. Background technique [0002] Microwave and millimeter wave radio frequency integrated circuit technology is the foundation of modern national defense weaponry and Internet industry. Millimeter-wave radio frequency integrated circuits also have huge actual needs and potential markets. [0003] In practical applications, radio frequency integrated circuit modules are placed in groups to realize multi-channel radio frequency modules to serve terminals. For ultra-high-density channel modules, if an independent unit is abnormal during use, the entire module will be affected. For tens of thousands of RF modules like phased array radar, when the number of abnormal modules reaches a certain proportion, they can only be returned to the factory for repair or scrapped. Contents of the invention [0004] Th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/50H01L21/60
CPCH01L21/50H01L24/80H01L2224/80801
Inventor 郁发新冯光建王志宇陈华张兵
Owner ZHEJIANG UNIV