A three-dimensional heterogeneous module welding method
A welding method and module technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of only returning to the factory for maintenance, module impact, scrapping, etc., and achieve the effect of reducing follow-up maintenance costs and prolonging service life.
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[0035] like Figure 1 to Figure 7 As shown, a three-dimensional heterogeneous module welding method specifically includes the following steps:
[0036] 101) The radio frequency module manufacturing step: on the upper surface of the radio frequency carrier board 101, a chip slot for placing the radio frequency chip is made. The chip slot is generally square, with a range of 1um to 5cm and a depth of 10um to 1000um. Deposit silicon oxide or silicon nitride on the surface of the radio frequency carrier 101, or directly thermally oxidize to form an insulating layer, and form a seed layer on the insulating layer by physical sputtering, magnetron sputtering or evaporation process. The thickness of the insulating layer ranges from 10nm to 100um, and the thickness of the seed layer ranges from 1nm to 100um. This size is used unless otherwise specified in the follow-up; the structure of the seed layer itself can be a single layer or a multilayer structure, and its material can be titan...
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