Controllable infrared focal plane detector stress chip device and control method

An infrared focal plane and detector technology, applied in measurement devices, radiation pyrometry, instruments, etc., can solve problems such as device reliability impact, device performance changes, increase failure probability, etc., to achieve the effect of easy construction

Pending Publication Date: 2020-02-14
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the process of semiconductor design, manufacturing and packaging, stress problem is a relatively common phenomenon. To solve this problem, some new and efficient strain devices can be designed by using the strain phenomenon between materials. However, for some unstrained devices, due to excessive stress , the reliability of the device will be severely affected and the probability of failure will increase
Stress in HgCdTe focal plane devices has a significant impact on device performance and reliability, leading to changes in device performance, detachment of interconnecting indium pillars, and even chip cracking

Method used

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  • Controllable infrared focal plane detector stress chip device and control method
  • Controllable infrared focal plane detector stress chip device and control method

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Embodiment Construction

[0014] Taking the regulation and control of the 1K long-wave mercury cadmium telluride infrared focal plane detector stress chip on the 74-line Dewar as an example, the specific implementation of the present invention will be further described in conjunction with the accompanying drawings:

[0015] The device used to regulate the chip is composed of a tie rod 1, a tie rod support 2, a base 3, a bead 4 and a gasket 5. The material used for the tie rod 1 and the tie rod support 2 is 5083 aluminum alloy, the base 3, the bead 4 and the gasket 5 materials are used Invar. Known that the diameter of the Dewar cold platform is 55mm, the diameter of the base 3 is 55mm, and the bead 4 is used to place the infrared focal plane detector chip. The direction and size of the external force can be adjusted by rotating the pull rod 1. The pitch of the pull rod 1 is 0.5mm , the size of the threaded hole 4-1 is M1.6, and the bead 4 is fixed on the gasket 5 with the matching screw, the size of th...

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Abstract

The invention discloses a controllable infrared focal plane detector stress chip device and a control method. The device used by the control method of the infrared focal plane detector stress chip includes a pull rod, a pull rod support, a base, a depression bar and a gasket. A manner of the device to control the stress chip is simple and easy to measure; and meanwhile, the device is easy to construct and detachable and may be used repeatedly. A prepared infrared focal plane detector stress chip is adhered on the depression bar by using a DW-3 low-temperature epoxy glue, an external force thatis downward or upward is applied to a free end, a photosensitive unit on the chip is divided into four areas, and by testing the four areas of the photosensitive unit on the chip, a photoelectric property parameter of the stress chip is obtained, so that a change of a resistivity may be measured. Through such a method, the carrier mobility of the chip may be controlled directly, the conductivitychanges, and thus, the photoelectric response of an infrared focal plane detector is improved; and at last, the property of a device is improved.

Description

technical field [0001] The invention belongs to the technical field related to infrared detector chip testing, and specifically refers to an adjustable infrared focal plane detector stress chip device and an adjusting method. It is suitable for infrared focal plane detectors whose material is mercury cadmium telluride and whose chip is a one-dimensional linear array. Background technique [0002] In the process of semiconductor design, manufacturing and packaging, stress problem is a relatively common phenomenon. To solve this problem, some new and efficient strain devices can be designed by using the strain phenomenon between materials. However, for some unstrained devices, due to excessive stress , the reliability of the device will be seriously affected and the probability of failure will increase. Stress in HgCdTe focal plane devices has a significant impact on the performance and reliability of the device, causing changes in device performance, detachment of interconne...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/02
CPCG01J5/0205G01J5/02G01J5/068
Inventor 叶振华张伟婷陈星刘丰硕孙常鸿
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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