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Debugging method of secondary temperature compensation zero point of silicon piezoresistive pressure sensor

A pressure sensor and temperature compensation technology, applied in the direction of measuring fluid pressure, instruments, measuring devices, etc., can solve the problems of zero-point output debugging difficulties, low debugging pass rate, etc., and achieve low debugging costs, simple pre-adjustment operations, and high debugging efficiency Effect

Active Publication Date: 2022-01-07
CHENGDU KAITIAN ELECTRONICS
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AI Technical Summary

Problems solved by technology

The existing thermistor compensation technology, because the relationship between the zero-point adjustment resistance and the output voltage is monotonic, the zero-point output voltage can only be reduced or increased when the zero-point output voltage is adjusted, and it is impossible to increase the output voltage and reduce the output voltage. It is difficult to debug the zero point output, and the debugging pass rate is low

Method used

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  • Debugging method of secondary temperature compensation zero point of silicon piezoresistive pressure sensor
  • Debugging method of secondary temperature compensation zero point of silicon piezoresistive pressure sensor

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Embodiment Construction

[0018] refer to figure 1 , figure 2. According to the present invention, utilizing the principle of piezoresistive variation of semiconductor diffused silicon, four equivalent semiconductor resistors are diffused in a specific direction of the silicon diaphragm, and connected into a Wheatstone bridge, as a force-electric conversion sensitive element; The sensitive resistors R1 and R2 of the Wheatstone bridge are connected to the power supply VCC, the sensitive resistors R3 and R4 are connected to the ground GND, and the sensitive resistors R1 and R3 are connected to the double-armed bridge circuit and the sensitive resistors R2 and R4. Connect Vout+ zero-point debugging resistor 1 and negative preset resistor 3 in parallel between the positive terminal Vout+ of the output signal of the arm bridge line and the GND terminal of the power supply, and at the same time connect the negative terminal Vout- of the output signal of the double-arm bridge line between the sensitive resi...

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Abstract

The invention discloses a secondary temperature compensation zero-point debugging method of a silicon piezoresistive pressure sensor, which can solve the problem that the zero-point output voltage needs to be increased and decreased. The present invention is realized through the following technical solutions: using the principle of piezoresistive change, diffusing four equivalent semiconductor resistors in a specific direction of the silicon diaphragm to form a Wheatstone bridge; connecting the sensitive resistors R1 and R2 of the Wheatstone bridge The double-arm bridge line is connected to the power supply VCC, the sensitive resistors R3 and R4 are connected to the ground, and the positive terminal Vout+ of the output signal of the sensitive resistor R1, R3 double-arm bridge line and the sensitive resistor R2, R4 double-arm bridge line is connected to the ground. Connect Vout+zero-point adjustment resistor and negative preset resistor in parallel between the power supply ground terminals, and connect positive preset resistors and Vout-zero point in parallel between the sensitive resistor R2 and R4 dual-arm bridge line output signal negative terminal Vout- and the power supply ground GND terminal Debug resistors to form a debug circuit.

Description

technical field [0001] The invention relates to a zero-point debugging method for secondary temperature compensation of a silicon piezoresistive pressure sensor, in particular to the zero-point output voltage debugging of a silicon piezoresistive pressure sensor for temperature compensation using a thermistor. Background technique [0002] Silicon bridge piezoresistive pressure sensor is currently the most widely used pressure sensor due to its good linearity, high sensitivity, small size, and easy integration. Due to the piezoresistive properties of semiconductor materials, the sensitivity of semiconductor materials is dozens of times higher than that of metal materials, which makes semiconductor materials ideal for pressure sensitive elements of sensors. In addition, silicon material also has good elastic strength and mechanical properties, so it has the advantages of strong overpressure resistance and sensitive response. Therefore, silicon material as the sensitive elemen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L27/00
CPCG01L27/002
Inventor 张峰
Owner CHENGDU KAITIAN ELECTRONICS
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