Series SiC MOSFET driving circuit based on multi-winding transformer coupling

Abstract

The invention provides a series SiC MOSFET driving circuit based on multi-winding transformer coupling. The driving circuit is mainly composed of a transformer, an energy storage capacitor and a push-pull circuit, wherein the transformer plays a role in constraining the relationship between the gate and source voltages of the series SiC MOSFETs, ensuring that the driving voltage of each series SiCMOSET is synchronously increased and decreased, and preventing the problem of dynamic voltage imbalance at the moment of switching on and switching off due to asynchronous driving voltages; the energy storage capacitor and the push-pull structure are used for ensuring that the SiC MOSFET has enough driving current at the moment of switching on, so that rapid switching on of the SiC MOSFET is realized; meanwhile, a discharge loop is constructed for the gate-source voltage at the moment of switching off, and the driving voltage is ensured to be reduced within a short time.

Description

technical field [0001] The invention belongs to the technical field of drive circuits, in particular to a series SiC MOSFET drive circuit based on multi-winding transformer coupling. Background technique [0002] As a third-generation power electronic semiconductor device, SiC MOSFET has higher operating frequency, better blocking characteristics, and higher withstand voltage level than traditional Si IGBT, but in some medium and high voltage applications, the single SiC MOSFET The withstand voltage level still cannot meet the requirements, and multiple SiC MOSFETs are required for series application. Connecting SiC MOSFETs in series involves a potential difference between individual drive sources, so multiple drive power sources are required for power supply. In addition, due to the parasitic parameters between individual SiC MOSFET devices and the characteristic differences between the driver chips, there will be a delay in the driving signal of the SiC MOSFET in series, ...

AI Technical Summary

Problems solved by technology

However, in the above three methods, the series SiC MOSFETs are turned on sequentially, and they have to bear the high-voltage bus voltage in a short period of time, and the gate-source resistance and capacitance need to consider their application voltage to adapt to the high voltage caused by the floating source potential in the series structure.

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