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Method for producing silicon single crystal

A manufacturing method and technology of single crystal silicon, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as easy occurrence of dislocations

Active Publication Date: 2020-03-24
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] It is known that dislocation tends to occur in the middle of pulling such a low-resistivity single crystal silicon when it is pulled by the pulling method or the like.

Method used

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  • Method for producing silicon single crystal
  • Method for producing silicon single crystal
  • Method for producing silicon single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0065] [1] When red phosphorus is used as a dopant

[0066] The resistivity was controlled by adding a red phosphorus dopant according to the position of the straight body length of the silicon single crystal 10 , and pulling of the silicon single crystal 10 doped with red phosphorus was performed simultaneously.

[0067] The diameter of the straight body of the single crystal silicon 10 is set to be 301 mm or more and 330 mm or less. In the embodiment, a crucible 3 with an inner diameter of 22 inches (558.8 mm) is used (the inner diameter of the crucible 3 / the straight body diameter of the single crystal silicon = 1.86). In the example, a crucible 3 with an inner diameter of 32 inches (812.8 mm) was used (the inner diameter of the crucible 3 / the diameter of the straight body of the single crystal silicon = 2.70).

[0068] In the example, the rotation speed of the crucible 3 was set to 16 rpm when the shoulder portion of the silicon single crystal 10 started to form, and was c...

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Abstract

Provided is a method for producing a silicon single crystal by the Czochralski method in which a silicon single crystal having a straight body diameter of 301-330 mm is pulled up and grown from a silicon solution containing red phosphorous as a dopant, wherein the resistivity of the straight body of silicon single crystal at the starting position is controlled to 1.20-1.35 m omega cm, and then theresistivity of the single crystal is gradually reduced such that the resistivity of a portion of the silicon single crystal is 0.7-1.0 momegacm.

Description

technical field [0001] The invention relates to a method for manufacturing monocrystalline silicon. Background technique [0002] In recent years, mobile devices such as mobile phones have spread widely. With regard to such mobile devices, there is a strong demand for long-term portable use, and studies have been conducted to increase the capacity of batteries built in the mobile devices and to reduce the power consumption of the mobile devices themselves. [0003] In order to reduce the power consumption of the mobile device itself, it is necessary to reduce the power consumption of semiconductor devices mounted inside the mobile device. [0004] For example, a low-voltage power MOSFET (Metal Oxide Semi-Conductor Field Effect Transistor: Metal Oxide Semiconductor Field Effect Transistor) used as a power device for mobile devices has a constant internal resistance when it is turned on (energized). , so it itself consumes power corresponding to the current flowing to the lo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B15/04
CPCC30B15/04C30B29/06C30B15/20
Inventor 川上泰史前川浩一
Owner SUMCO CORP