Method for producing a gas-sensitive nanocrystalline layer structure, corresponding gas-sensitive nanocrystalline layer structure, and gas sensor with a corresponding gas-sensitive nanocrystalline layer structure

A gas sensor, gas-sensitive technology, applied in the direction of manufacturing microstructure devices, microstructure technology, microstructure devices, etc.

Pending Publication Date: 2020-04-03
ROBERT BOSCH GMBH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, the choice of parameters (time, temperature) in the temperature treatment step is limited because some sensor materials may have undesired recrystallization properties

Method used

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  • Method for producing a gas-sensitive nanocrystalline layer structure, corresponding gas-sensitive nanocrystalline layer structure, and gas sensor with a corresponding gas-sensitive nanocrystalline layer structure
  • Method for producing a gas-sensitive nanocrystalline layer structure, corresponding gas-sensitive nanocrystalline layer structure, and gas sensor with a corresponding gas-sensitive nanocrystalline layer structure

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Embodiment Construction

[0025] In the figures, identical reference numbers indicate identical or functionally identical elements.

[0026] figure 1 A schematic illustration for explaining the layer structure according to the first embodiment of the invention before the temperature treatment step is shown in cross section.

[0027] figure 1 The case of an amorphous deposition of base material and dopant is shown, further morphologies are also conceivable, for example a base material which is already present in partially crystalline form after deposition, wherein the dopant material can already be deposited, in particular is the intrusion along the grain boundaries during the annealing step.

[0028] exist figure 1101 denotes an insulating layer (substrate), 102 denotes a base layer consisting of a base material, 103 denotes a doped layer consisting of a dopant material and 100 denotes after deposition, for example by sputtering or by an ALD process The entire layer structure before the temperature...

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Abstract

The invention relates to a method for producing a gas-sensitive nanocrystalline layer structure, a corresponding gas-sensitive nanocrystalline layer structure, and a gas sensor with a corresponding gas-sensitive nanocrystalline layer structure. The method for producing a gas-sensitive nanocrystalline layer structure (201) on a substrate (101) has the steps of: depositing a base layer (102) made ofa base material, depositing a doped layer (103) made of a doped material, repeating the aforementioned steps, and carrying out an annealing step, whereby a nanocrystalline gas-sensitive layer structure (200) is produced.

Description

technical field [0001] The invention relates to a method for producing a nanocrystalline, gas-sensitive layer structure, a corresponding nanocrystalline, gas-sensitive layer structure and a gas having a corresponding nanocrystalline, gas-sensitive layer structure sensor. Background technique [0002] Although any desired micromechanical components can also be used, the invention and the problem underlying the invention are explained with reference to a component having a gas sensor. [0003] The sensitive layer of metal oxide gas sensors is generally constructed from a homogeneous material, where as prior art the material is applied as a paste and sintered on the sensor. There are also methods for deposition from inks (inkjet) and thin-layer processes (CVD / PVD, chemical and physical vapor deposition) are also known for deposition, for example by sputtering or pulsed laser (re)deposition. In thin-layer technology in turn a very large number of methods are known for producin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/125B81C1/00206B81C2201/0173G01N27/127
Inventor A·克劳斯E·普赖斯
Owner ROBERT BOSCH GMBH
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