Rapid forming device and forming process for tungsten electrode filament under vacuum state

A technology of vacuum state and forming device, applied in the field of tungsten electrode filament rapid forming device and its forming process under vacuum state, can solve the problems of high melting point, low vapor pressure, high resistivity, etc., and achieves convenient use, high efficiency and simple structure Effect
CN110976694AActive Publication Date: 2020-04-10合肥聚能电物理高技术开发有限公司

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
合肥聚能电物理高技术开发有限公司
Publication Date
2020-04-10

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
Patent Text Reader

Abstract

The invention discloses a rapid forming device and forming process for a tungsten electrode filament under the vacuum state. The forming device comprises a vacuum chamber. The vacuum chamber communicates with a vacuumizing system, an electric heating system and a nitrogen injection system. A female die forming die, a male forming die and a vertical forming die which are used for pressing tungstenelectrode filaments are arranged in the vacuum chamber. The forming process comprises the steps of closing of the female die forming die and the male die forming die and the like. The rapid forming device is simple in structure and convenient to use, one-time rapid forming of the tungsten electrode filaments is achieved on the premise of not destroying the tungsten characteristics, and the manufacturing requirement of the tungsten electrode filaments in the NBI ion source arc chamber can be effectively met.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of manufacturing nuclear fusion devices, in particular to a tungsten filament rapid prototyping device in a vacuum state and a prototyping process thereof. Background technique

[0002] Such as figure 1 As shown, the NBI ion source arc chamber a in the EAST superconducting tokamak device is equipped with multiple tungsten filaments b, and its shape needs to be consistent with the resistance in the chamber body. The resistivity of tungsten is 5.3*10-8Ω·m, with high melting point, high resistivity, good strength and low vapor pressure. It is the best material for making filaments among all pure metals. It is processed into the tungsten filament shape required by the NBI ion source arc chamber. Contents of the invention

[0003] The purpose of the present invention is to overcome the shortcomings of the above-mentioned prior art, and provide a tungsten filament rapid prototyping device and its forming proce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More