Method for evaluating erasing performance of Flash memory under thermoelectric stress

Abstract

The invention provides a method for evaluating the erasing performance of a Flash memory under thermoelectric stress. The method comprises the steps of 1 primarily screening the Flash memory, performing a full-chip erasing read test on a device sample once, and removing a failed device; 2 selecting an erasing test algorithm, selecting test temperature groups, and simulating environmental stresseswith different intensities; 3 carrying out an erasure cycle test, recording the number of read data errors of each temperature group, and stopping the test when all devices fail or reach a preset testtime; 4 screening test data, and calculating the average fault-free working time theta of each temperature group; 5 calculating a function relationship between the environment temperature and the average fault-free working time of the temperature; 6 solving the average fault-free working time at normal temperature; 7 according to the time and the erasure frequency used by a single cycle in the erasure cycle test, calculating the erasure-resistant frequency at normal temperature; and 8 comparing with the theoretical erasure-resistant times of the model of devices, and evaluating whether the erasure-resistant performance of the batch of devices meets requirements or not. Through the steps, the erasing performance of the Flash memory can be evaluated by utilizing the erasing times; the testtime is reduced; a sufficient reliability basis is provided for testing and evaluating the Flash memory; and the method has practical popularization and application values.

Description

[0001] (1) Technical field: [0002] The invention relates to a performance evaluation method of electronic components, in particular to a method for evaluating the erasing performance of a Flash memory under thermoelectric stress, which belongs to the reliability evaluation of electronic components. [0003] (2) Background technology [0004] Flash memory (or flash memory) is a commonly used non-volatile memory. This device can save data when it is not powered on, and can record and read data when it is powered on. It can be erased and written up to 100,000 times. This feature of Flash memory makes it the basis of storage media for various portable digital devices. It is widely used in civilian fields, and its status in aerospace, military equipment, aviation and other fields is also getting higher and higher. In order to improve storage efficiency, the process size of Flash memory is continuously reduced, the erasing and writing speed and integration level are greatly improve...

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is in order to provide a method for evaluating the erasing and writing performance of Flash memory under thermoelectric stress, which can solve the problems that the current evaluation basis for the erasing and writing performance of Flash memory is few and the method efficiency is low

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