A method to improve the bandwidth of micro-led in visible light communication
A visible light communication and bandwidth technology, applied in the field of visible light communication, can solve the problems of limiting LED bandwidth, visible light communication transmission rate and transmission distance limitation, and achieve the effect of increasing the transmission distance, optimizing the thickness of the ALD layer, and improving the bandwidth.
Active Publication Date: 2021-03-12
XIAMEN UNIV +2
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[0004] A major bottleneck in the large-scale application of visible light communication is the selection of light sources. From the birth of the original LED to the derivation of a new generation of Micro-LEDs, the original intention of the semiconductor process design is to consider lighting and color display, rather than From the perspective of communication, the traditional semiconductor process has limited the bandwidth of LEDs in the entire semiconductor industry, and the transmission rate and transmission distance of visible light communication have also been limited.
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[0031] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer and clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.
[0032] see figure 1 , is the microstructure model of the Micro-LED chip, which belongs to the formal structure, that is, the light emitting end is at the top of the Micro-LED pillar, and the multiple quantum wells of this structure are in direct contact with the quantum dots.
[0033] see figure 2 , which is the annular, columnar, and hole-like structure formed in the active area of Micro-LED at the micro-nano scale, which ensures the maximum contact area between quantum dots and quantum wells. Based on the non-radiative energy transfer mechanism, compared with other methods, it can The lower carrier lifetime can be achieved, and then the higher -3dB bandwidth of Micro-LED can be obtained, and final...
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A method for improving Micro-LED bandwidth in visible light communication relates to the field of visible light communication, and comprises the following steps: 1) constructing an optical performancemodel of a Micro-LED chip according to a regulation and control mechanism of an active region of the Micro-LED chip on a light emitting wavelength of the chip; 2) according to the Micro-LED chip optical performance model constructed in the step 1), preparing a Micro-LED chip of which the quantum well layer is exposed under a micro-nano scale; 3) depositing an ALD layer on the side wall of the Micro-LED chip prepared in the step 2); and (4) depositing quantum dots on the Micro-LED chip to enable the quantum dots to be in contact with the side wall quantum well, thereby increasing the carrier recombination efficiency by utilizing a non-radiation energy transfer mechanism, reducing the carrier lifetime, and further improving the-3dB bandwidth of the Micro-LED.
Description
technical field [0001] The invention relates to the field of visible light communication, in particular to a method for improving the bandwidth of Micro-LEDs in visible light communication. Background technique [0002] In the LED semiconductor industry, from traditional LCD to OLED to today’s Micro-LED, the lighting application industry has been continuously upgraded. At present, although Micro-LED mainly forms two major application directions, one is the wearable market represented by Apple. ; the other is the ultra-large-size TV market represented by display manufacturers such as Samsung; however, a new generation of even innovative display technology——Micro-LED is applied to visible light communication, which also has great development prospects. The light source in the technology is a relatively new academic idea, and at the same time, the forward-looking and feasibility are guaranteed. It not only expands the application range of Micro-LED, but also lays the foundation...
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IPC IPC(8): H04B10/116H04B10/50
CPCH04B10/116H04B10/502
Inventor 吴挺竹王泽平周海珠张健陈传凤刘青青郑振耀林岳陈忠吕毅军高巨守刘梦
Owner XIAMEN UNIV