Locating Method of Memory Failure Point

A positioning method and failure point technology, applied in static memory, instruments, etc., can solve problems such as low accuracy and reduce the success rate of failure analysis work, and achieve the effect of improving positioning accuracy and simple positioning method

Active Publication Date: 2021-12-17
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the existing failure analysis methods have low accuracy in locating failure points, which seriously reduces the success rate of failure analysis work.

Method used

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  • Locating Method of Memory Failure Point
  • Locating Method of Memory Failure Point
  • Locating Method of Memory Failure Point

Examples

Experimental program
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Embodiment Construction

[0023] The specific implementation of the method for locating memory failure points provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0024] figure 1 is a cutaway schematic of an existing memory, see figure 1 The 3D NAND bonding (bonding) memory includes a support layer 10 and a device layer 11 disposed on the support layer 10 . Performing failure analysis on memory is generally performing failure analysis on device layer 11. When performing failure analysis on the device layer 11, it is necessary to locate the failure point. Generally, the failure point of the device layer 11 is located by the method of grabbing points on the back side and grabbing points on the front side. The backside grasping point is to locate the failure point of the device layer 11 from the side of the supporting layer 10. The disadvantage is that the supporting layer 10 will block the positioning signal (such as a laser signal or an ...

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Abstract

The invention provides a method for locating a memory failure point, which includes the following steps: initially locating the failure point, obtaining the initial position of the failure point; marking the area where the initial position of the failure point is located as a target area; removing the metal on the surface of the target area layer; locate the failure point again to obtain the final location of the failure point. The method for locating the failure point of the memory of the invention is simple and easy, and greatly improves the positioning accuracy of the failure point.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for locating memory failure points. Background technique [0002] As technology develops, the semiconductor industry is constantly seeking new ways to produce a greater number of memory cells per memory die in a memory device. In non-volatile memory, such as NAND memory, one way to increase the memory density is by using vertical memory arrays, that is, 3D NAND (three-dimensional NAND) memory; 32 layers developed to 64 layers, or even higher layers. [0003] Failure analysis of memory after design and manufacture is an important means to improve the yield of memory and improve the reliability and stability of process technology. However, the existing failure analysis methods have low accuracy in locating failure points, which seriously reduces the success rate of failure analysis. [0004] Therefore, how to improve the accuracy of failure point location in t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/56G11C29/04
CPCG11C29/56G11C29/04
Inventor 徐静王君易刘慧丽卜丽丽
Owner YANGTZE MEMORY TECH CO LTD
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