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Microelectronic sensor for biometric authentication

A biometric and sensor technology, applied in the field of microelectronic sensors, can solve problems such as taking a long time

Pending Publication Date: 2020-05-01
EPITRONIC HLDG PTE LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In practice, this is a huge disadvantage compared to existing capacitive fingerprint sensors, as it would take a very long time to authenticate a user or for example unlock a phone, compared to the existing authentication time of one second

Method used

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  • Microelectronic sensor for biometric authentication
  • Microelectronic sensor for biometric authentication
  • Microelectronic sensor for biometric authentication

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Embodiment Construction

[0060] In the following description, various aspects of the application will be described. For purposes of illustration, specific configurations and details are set forth in order to provide a thorough understanding of the application. It will also be apparent, however, to one skilled in the art that the present application may be practiced without the specific details provided herein. Additionally, well-known features may have been omitted or simplified in order not to obscure the present invention.

[0061]The term "comprising", as used in the claims, is "open-ended" and means the recited elements, or their structural or functional equivalents, and any other unrecited element or elements. It should not be read as limited to the means listed thereafter; it does not exclude other elements or steps. It needs to be understood as stating that the stated features, integers, steps or components exist as stated, but does not exclude the presence or addition of one or more other fe...

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Abstract

A microelectronic sensor for biometric authentication of a user is based on the combination of an open-gate pseudo-conductive high-electron mobility transistor and a Vivaldi antenna installed in the open gate area of the transistor. The sensor is capable of sensing the sub-THz radiation produced by the body of the user, and comprises a heterojunction structure made of the layers of GaN / AlGaN single- or poly-crystalline semiconductor materials stacked alternately and a conducting channel comprising a two-dimensional electron gas (2DEG) or a two-dimensional hole gas (2DHG) formed at the interface between the GaN / AlGaN layers. The highest sensitivity of the sensor is achieved when the thickness of the top recessed layer (GaN or AlGaN) in the open gate area between the source and drain contacts is 5-9 nm and the surface roughness of this top layer is about 0.2 nm or less.

Description

technical field [0001] The present application relates to the field of microelectronic sensors based on high electron mobility transistors and their use in the detection and continuous monitoring of electrical signals generated by the human body in the sub-terahertz range. In particular, the application relates to open-gate pseudoconducting high electron mobility transistors (PC-HEMTs) and their use in biometric authentication. Background technique [0002] Today, many different types of biometric authentication systems are used in smartphones, key locks, airports, and other high-security locations that require an extremely high level of authentication. Commercially available authentication systems may include fingerprint ID sensors, iris ID sensors, or voice recognition. However, these systems proved to have a relatively low level of security. [0003] In 2014, Bionym launched a new electrocardiogram (ECG)-based biometric authentication device. Dubbed "Nymi," the device ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/193H01L29/423A61B5/05A61B5/145H01L31/112A61B5/00A61B5/1172A61B5/117
CPCA61B5/0022A61B5/0507A61B5/117A61B5/6802H01L31/112A61B2562/0228A61B2562/028A61B2562/043A61B2562/12H01L29/42316H01L29/7781H01L29/7783H01L29/7786G16H40/67
Inventor 阿亚尔·拉姆瓦利德-迈德哈特·姆尼夫
Owner EPITRONIC HLDG PTE LTD