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ldmos device and its manufacturing method

A device and drift region technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical solid devices, etc., can solve the problems of reduced breakdown voltage and increased on-resistance, and achieve high breakdown voltage, uniform electric field distribution, The effect of improving breakdown voltage and reliability

Active Publication Date: 2021-08-24
HUA HONG SEMICON WUXI LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] LDMOS devices pursue high breakdown voltage and low on-resistance. However, in the structure of traditional LDMOS devices, high breakdown voltage and low on-resistance clamp each other. The breakdown voltage is reduced, and only a balance point can be achieved between the on-resistance and the breakdown voltage

Method used

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  • ldmos device and its manufacturing method
  • ldmos device and its manufacturing method
  • ldmos device and its manufacturing method

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Embodiment Construction

[0039] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0040] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

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Abstract

The application discloses an LDMOS device and a manufacturing method thereof, and relates to the technical field of semiconductor manufacturing. The LDMOS device at least includes a body region and a drift region in the substrate, a body contact region and a source region are arranged in the body region, and a drain region is arranged at one end of the drift region; a gate, a body contact region, a source region are also arranged on the surface of the substrate The region, the drain region and the gate lead out of the interlayer dielectric layer through the contact holes; a through hole array is also arranged in the interlayer dielectric layer, and the through hole array is located above the drift region; the through hole array includes several columns of through holes, and each column includes Several through holes, the shape of the opening of the through hole is square, the opening size of the through hole is smaller than the opening size of the contact hole, and the opening size of the through hole gradually decreases in columns; it solves the problem that the breakdown voltage of the traditional LDMOS device is limited by the size of the device The problem of limitation; the effect of improving the breakdown voltage and reliability of the LDMOS device is achieved.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, in particular to an LDMOS device and a manufacturing method thereof. Background technique [0002] LDMOS (Lateral Double-Diffused MOSFET, lateral double-diffused metal-oxide-semiconductor field-effect transistor) device is a commonly used power device, and its breakdown voltage and on-resistance are important indicators for measuring its performance. [0003] LDMOS devices pursue high breakdown voltage and low on-resistance. However, in the structure of traditional LDMOS devices, high breakdown voltage and low on-resistance clamp each other. The breakdown voltage is reduced, and only a balance point can be achieved between the on-resistance and the breakdown voltage. At present, the breakdown voltage can be improved by adopting a gate field plate or a metal layer field plate. Contents of the invention [0004] In order to solve the problems of related technologie...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/538H01L29/40H01L29/78H01L21/768H01L21/336
CPCH01L21/76897H01L23/5386H01L29/404H01L29/407H01L29/66681H01L29/7816
Inventor 刘俊文陈华伦陈瑜
Owner HUA HONG SEMICON WUXI LTD