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A heteroplane structure Gaas photoconductive switch based on graphene interface layer and its preparation process

A photoconductive switch, graphene layer technology, applied in sustainable manufacturing/processing, semiconductor device, final product manufacturing and other directions, can solve the problems of short life, easy burnout, uneven heat dissipation of switching devices, and achieve good heat dissipation performance, The effect of high life and clear process

Active Publication Date: 2021-09-07
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the above problems, the present invention provides a GaAs photoconductive switch with a heteroplane structure based on a graphene interface layer and its preparation process. At present, most photoconductive switches are produced around the principle of forming ohmic contacts between gallium arsenide and multilayer metals. , but the switching device is faced with short life, uneven heat dissipation, and easy burnout. The present invention transfers high-quality graphene to the target substrate and then coats the surface with metal to form a gallium arsenide-graphene-metal Composite structure, homogeneous electric field, current is not concentrated, and relatively less heat is generated, which has a great effect on the heat dissipation and life of the device

Method used

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  • A heteroplane structure Gaas photoconductive switch based on graphene interface layer and its preparation process
  • A heteroplane structure Gaas photoconductive switch based on graphene interface layer and its preparation process
  • A heteroplane structure Gaas photoconductive switch based on graphene interface layer and its preparation process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0087] Select a semi-insulating gallium arsenide double-polished wafer with a crystal orientation , with a thickness of 600 μm, and use acetone, sulfuric acid and other processes to clean the surface of the gallium arsenide to remove surface impurities.

[0088] 1) Preparation of composite structure of CVD graphene and gallium arsenide

[0089] On a Cu foil with a thickness of 25 μm, graphene is grown by CVD, and the graphene is transferred to a semi-insulating GaAs surface by a pulling method to obtain a first composite structure.

[0090] 2) Graphicalize the first composite structure:

[0091] The first photolithography (front and back):

[0092] (1) Apply photoresist AZ-5214 (2) Uniform glue (3) Pre-baking (4) Exposure (5) Development (6) Post-baking (7) UVO to remove residual glue;

[0093] 3) Then make five layers of metal (front and back) on the surface as electrodes (Ni layer, Ge layer, Au layer, Ni layer and Au layer). The total thickness of the five layers of metal ...

Embodiment 2

[0104] Select a four-inch gallium arsenide double-polished wafer with crystal orientation , resistivity ≥ 10Ωcm, thickness 600μm, use acetone, sulfuric acid and other processes to clean the surface of gallium arsenide to remove surface impurities.

[0105] 1) Preparation of composite structure of CVD graphene and gallium arsenide

[0106] On a Cu foil with a thickness of 25 μm, graphene is grown by CVD, and the graphene is transferred to a semi-insulating GaAs surface by a pulling method to obtain a first composite structure.

[0107] 2) Graphicalize the first composite structure:

[0108] The first photolithography (front and back):

[0109] (1) Apply photoresist AZ-5214 (2) Uniform glue (3) Pre-baking (4) Exposure (5) Development (6) Post-baking (7) UVO to remove residual glue;

[0110] 3) Then make five layers of metal (front and back) on the surface as electrodes (Ni layer, Ge layer, Au layer, Ni layer and Au layer). The total thickness of the five layers of metal is 296...

Embodiment 3

[0121] Select a four-inch gallium arsenide double-polished wafer with crystal orientation , resistivity ≥ 10Ωcm, thickness 600μm, use acetone, sulfuric acid and other processes to clean the surface of gallium arsenide to remove surface impurities.

[0122] 1) Preparation of composite structure of CVD graphene and gallium arsenide

[0123] On a Cu foil with a thickness of 25 μm, graphene is grown by CVD, and the graphene is transferred to a semi-insulating GaAs surface by a pulling method to obtain a first composite structure.

[0124] 2) Graphicalize the first composite structure:

[0125] The first photolithography (front and back):

[0126] (1) Apply photoresist AZ-5214 (2) Uniform glue (3) Pre-baking (4) Exposure (5) Development (6) Post-baking (7) UVO to remove residual glue;

[0127] 3) Then make five layers of metal (front and back) on the surface as electrodes (Ni layer, Ge layer, Au layer, Ni layer and Au layer). The total thickness of the five layers of metal is 296...

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Abstract

The invention discloses a GaAs photoconductive switch with heteroplane structure based on graphene interface layer and its preparation process. The upper and lower surfaces of the GaAs substrate are provided with contact electrodes, and the two contact electrodes are respectively used as the anode and cathode of the GaAs photoconductive switch. The surfaces of the two contact electrodes are provided with external electrodes, and there is a graphene layer between the two contact electrodes and the GaAs substrate. The upper surface of the GaAs substrate is also covered with a passivation layer. The contact electrodes are from the graphene layer to the external electrode. The electrode direction is Ni layer, Ge layer, Au layer, Ni layer and Au layer in sequence. The invention transfers high-quality graphene to the target substrate and then coats metal on the surface to form a composite structure of gallium arsenide-graphene-metal, homogenizes the electric field, does not concentrate the current, and generates relatively little heat , which has a great effect on the heat dissipation and life of the device.

Description

technical field [0001] The invention relates to the technical field of a gallium arsenide photoconductive switch, in particular to a GaAs photoconductive switch with a heteroplane structure based on a graphene interface layer and a preparation process thereof. Background technique [0002] Gallium arsenide photoconductive switch has many advantages, such as simple structure, fast response speed, high voltage resistance, small trigger jitter, high switching precision, and can be used for high switching precision, THz technology, high-power optical communication and high-noise environment. Electronics and transient electromagnetic wave technology have broad application prospects, and they also have important applications in fields such as weapon ignition, radar communication, and environmental monitoring, and photoconductive switches are gradually showing important applications in other fields such as biology and medicine. [0003] However, traditional gallium arsenide photoco...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/024H01L31/0224H01L31/09H01L31/18
CPCH01L31/0224H01L31/024H01L31/09H01L31/184Y02P70/50
Inventor 胡龙李昕崔宏旺朱莉刘康孙岳
Owner XI AN JIAOTONG UNIV
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