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A Quick Start Circuit of Bandgap Reference Voltage Source

A reference voltage source and quick start technology, applied in the direction of adjusting electrical variables, instruments, control/regulation systems, etc., can solve the problems of high output, damage, and proportional amplification of the booster circuit, to eliminate overshoot, improve stability, To avoid the effect of device overvoltage

Active Publication Date: 2021-07-30
PUYA SEMICON SHANGHAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The output of the subsequent connected boost circuit (pump) is generally amplified in proportion to the Vref voltage; therefore, the overshoot voltage output by the main circuit of the bandgap reference will further cause the output of the boost circuit to be too high, so that it exceeds the BV of the MOS tube Voltage (Breakdown Voltage; insulation breakdown voltage) and damage

Method used

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  • A Quick Start Circuit of Bandgap Reference Voltage Source
  • A Quick Start Circuit of Bandgap Reference Voltage Source
  • A Quick Start Circuit of Bandgap Reference Voltage Source

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Embodiment Construction

[0023] The invention provides a fast starting circuit for a bandgap reference voltage source, which adds a current bias circuit to accurately control the starting reference voltage source (BGR). Such as figure 2 As shown, the bandgap reference circuit provided by the present invention includes a bandgap reference main circuit and a bandgap reference starting circuit.

[0024] The above bandgap reference main circuit further includes: PMOS transistors PM3, PM4 and PM5, an operational amplifier, resistors R0, R1, R2 and R3, and transistors Q1 and Q2.

[0025] Wherein, the negative input terminal VINN of the operational amplifier is connected to the emitter of the triode Q1, and also connected to one end of the resistor R1; the other end of the resistor R1 is grounded, and the base and collector of the triode Q1 are connected and grounded. The positive input terminal VINP of the operational amplifier is connected to one end of the resistor R2, and is also connected to the emitt...

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Abstract

The present invention relates to a fast starting circuit of a bandgap reference voltage source, wherein the bandgap reference starting circuit comprises: PMOS transistors PM1 and PM2, NMOS transistor NM1, depletion NMOS transistor NM2, a current source; the transistor NM1 and the transistor NM2 The gate is connected to the Ponrst signal; when the Ponrst signal is at a high level, the tube NM1 and the tube NM2 are turned on, and the current source current I bias The bias voltage Pbias_setup is generated by the transistor PM1 at the node corresponding to the drain of the transistor NM1 , so that the voltage of the Pbias signal corresponding to the output terminal of the operational amplifier is equal to the bias voltage Pbias_setup. The invention uses the bias current source to start the voltage reference source, which can eliminate the voltage overshoot phenomenon and improve the stability of the circuit.

Description

technical field [0001] The invention belongs to the technical field of semiconductor circuits, in particular to a fast start circuit of a bandgap reference voltage source. Background technique [0002] The bandgap reference circuit includes a bandgap reference body circuit and a bandgap reference starting circuit. Such as figure 1 As shown, the main circuit of the bandgap reference mainly includes: PMOS transistors PM3, PM4 and PM5, operational amplifiers, resistors R0, R1, R2 and R3, and transistors Q1 and Q2. Wherein, the negative input terminal VINN of the operational amplifier is connected to the emitter of the triode Q1, and also connected to one end of the resistor R1; the other end of the resistor R1 is grounded, and the base and collector of the triode Q1 are connected and grounded. The positive input terminal VINP of the operational amplifier is connected to one end of the resistor R2, and is also connected to the emitter of the transistor Q2 through the resistor ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/567
CPCG05F1/567
Inventor 李兆桂陈涛
Owner PUYA SEMICON SHANGHAI CO LTD
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