Method for forming silicon-based laminate and method for manufacturing silicon-based solar cell
A technology of solar cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of reduced life cycle of electrons and hole carriers, long time spent, uneven heating, etc., to achieve improved Effect of interface defect density, good conversion efficiency
Inactive Publication Date: 2020-06-05
METAL INDS RES & DEV CENT
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Problems solved by technology
[0003] However, there are many defects on the surface of current silicon-based materials (such as single crystal silicon substrates or amorphous silicon layers), such as highly active dangling bonds, which make it easy for electrons and holes to recombine, resulting in carrier The life cycle is reduced
Traditionally, the heating annealing process is used to improve the surface defects of silicon-based materials, but the traditional heating method is to heat from the outside to the inside, which makes the heating uneven and takes a long time
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[0047] The present invention will be described more fully below with reference to the accompanying drawings of this embodiment. However, the present invention can also be embodied in various forms and should not be limited to the embodiments described herein. In the drawings, the thicknesses of layers and regions may be exaggerated for clarity. The same or similar reference numerals denote the same or similar elements, and the following paragraphs will not repeat them one by one. In addition, the directional terms mentioned in the embodiments, such as: up, down, left, right, front or back, etc., are only directions referring to the attached drawings. Accordingly, the directional terms are used to illustrate and not to limit the invention.
[0048]Generally, silicon-based stacks are prone to surface defects during fabrication. A method for forming silicon-based stacks is provided below to uniformly and quickly reduce defects between interfaces of silicon-based stacks.
[004...
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Abstract
The invention provides a method for forming a silicon-based laminate, which comprises the following steps of: providing a silicon substrate with a first surface and a second surface which are oppositeto each other, forming a first thin film layer on the first surface, forming a second thin film layer on the second surface, and performing microwave processing on the silicon substrate, the first thin film layer and the second thin film layer to passivate the first thin film layer and the second thin film layer. The invention also provides a method for manufacturing the silicon-based solar cell.
Description
technical field [0001] The invention relates to a method for forming a laminate and a method for manufacturing a solar cell, in particular to a method for forming a silicon-based laminate and a method for manufacturing a silicon-based solar cell. Background technique [0002] Silicon is the second most abundant element on earth. Since silicon has a solid foundation in the development of the semiconductor industry, most solar cells currently use silicon as the main material. The basic structure of a solar cell is formed by joining P-type and N-type semiconductors. At the junction of N-type semiconductors and P-type semiconductors, a built-in electric field will be generated from N to P. When sunlight shines in, photons provide energy, and the generated electrons will move to the N-type semiconductor under the action of the electric field, and the holes will move to the P-type semiconductor, and the charges accumulated on both sides are connected by wires. Output current. ...
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IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/02167H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 田伟辰洪政源叶昌鑫吴以德
Owner METAL INDS RES & DEV CENT