Gallium nitride enhancement mode device and manufacturing method thereof
A manufacturing method and enhanced technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as gate instability, conduction voltage variation, process complexity, etc., to achieve the solution of conduction voltage And the effects of reliability instability, reduced on-resistance, and high performance
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Embodiment 1
[0070] Growth was performed by metal organic chemical vapor deposition (MOCVD) on a low resistivity 6-inch silicon-based (111) p-type substrate 1 . For the consideration of high breakdown voltage, a 4 μm thick AlN nucleation layer and a carbon-doped GaN buffer layer were first grown on the substrate 1 . Then a 300 nm undoped gallium nitride channel layer 3 is grown, followed by 3 nm undoped Al 0.25 For the ultra-thin AlGaN barrier layer 4 of GaN, a 1 nm GaN cap layer is grown again, so that the ultra-thin AlGaN barrier layer 4 is sandwiched between the 1 nm GaN cap layer and the GaN channel layer 3 . A gallium nitride cap layer is used to prevent oxidation of the ultra-thin AlGaN barrier layer 4 .
[0071] A 100-nm-thick silicon oxide mask layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) on the gallium nitride cap layer, and the regeneration zone was patterned using a dilute HF wet etch solution.
[0072] Use low damage SF 6 +BCl 3 The mixed gas rem...
Embodiment 2
[0076]Growth was performed by metal organic chemical vapor deposition (MOCVD) on a low resistivity 6-inch silicon-based (111) p-type substrate 1 . For the consideration of high breakdown voltage, a 5 μm thick AlN nucleation layer and a carbon-doped GaN buffer layer were first grown on the substrate 1 . Then a 300 nm undoped gallium nitride channel layer 3 is grown, followed by 3 nm of undoped Al 0.22 For the ultra-thin AlGaN barrier layer 4 of GaN, a 1 nm GaN cap layer is grown again, so that the ultra-thin AlGaN barrier layer 4 is sandwiched between the 1 nm GaN cap layer and the GaN channel layer 3 . A gallium nitride cap layer is used to prevent oxidation of the ultra-thin AlGaN barrier layer 4 .
[0077] A 120-nm-thick silicon oxide mask layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) on the gallium nitride cap layer, and the regeneration zone was patterned using a dilute HF wet etch solution.
[0078] Use low damage SF 6 +BCl 3 The mixed gas r...
Embodiment 3
[0082] Growth was performed by metal organic chemical vapor deposition (MOCVD) on a low resistivity 6-inch silicon-based (111) p-type substrate 1 . For the consideration of high breakdown voltage, a 4 μm thick AlN nucleation layer and a carbon-doped GaN buffer layer were first grown on the substrate 1 . Then a 300nm undoped gallium nitride channel layer 3 is grown, followed by 5nm undoped Al 0.22 For the ultra-thin AlGaN barrier layer 4 of GaN, a 1 nm GaN cap layer is grown again, so that the ultra-thin AlGaN barrier layer 4 is sandwiched between the 1 nm GaN cap layer and the GaN channel layer 3 . A gallium nitride cap layer is used to prevent oxidation of the ultra-thin AlGaN barrier layer 4 .
[0083] A 100-nm-thick silicon oxide mask layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) on the gallium nitride cap layer, and the regeneration zone was patterned using a dilute HF wet etch solution.
[0084] Use low damage SF 6 +BCl 3 The mixed gas remov...
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Abstract
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