Gallium nitride enhanced device and manufacturing method thereof
A manufacturing method and enhanced technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as on-voltage variation, gate instability, process complexity, etc., to reduce on-resistance , Improve the interface defect density, the effect of high performance
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Embodiment 1
[0070] It was grown by metal-organic chemical vapor deposition (MOCVD) on a low-resistivity 6-inch silicon-based (111) p-type substrate 1 . For the consideration of high breakdown voltage, a 4 μm thick AlN nucleation layer and a carbon-doped GaN buffer layer were first grown on the substrate 1 . Then grow 300nm undoped GaN channel layer 3, followed by 3nm undoped Al 0.25 An ultra-thin AlGaN barrier layer 4 of GaN, and a 1nm GaN cap layer is grown again, so that the ultrathin AlGaN barrier layer 4 is sandwiched between the 1nm GaN cap layer and the GaN channel layer 3 . Oxidation of the ultra-thin AlGaN barrier layer 4 is prevented using a GaN cap layer.
[0071] A 100-nm-thick silicon oxide mask layer was deposited on the GaN cap layer by plasma-enhanced chemical vapor deposition (PECVD), and the regrowth was pattern-defined using a dilute HF wet etch solution.
[0072] Use low damage SF 6 +BCl 3 The mixed gas removes the 1nm GaN cap layer by dry etching process, and the e...
Embodiment 2
[0076]It was grown by metal-organic chemical vapor deposition (MOCVD) on a low-resistivity 6-inch silicon-based (111) p-type substrate 1 . For the consideration of high breakdown voltage, a 5 μm thick AlN nucleation layer and a carbon-doped GaN buffer layer were first grown on the substrate 1 . Then grow 300nm undoped GaN channel layer 3, followed by 3nm undoped Al 0.22 An ultra-thin AlGaN barrier layer 4 of GaN, and a 1nm GaN cap layer is grown again, so that the ultrathin AlGaN barrier layer 4 is sandwiched between the 1nm GaN cap layer and the GaN channel layer 3 . Oxidation of the ultra-thin AlGaN barrier layer 4 is prevented using a GaN cap layer.
[0077] A 120-nm-thick silicon oxide mask layer was deposited on the GaN cap layer by plasma-enhanced chemical vapor deposition (PECVD), and the regrowth was pattern-defined using a dilute HF wet etch solution.
[0078] Use low damage SF 6 +BCl 3 The mixed gas removes the 1nm GaN cap layer by dry etching process, and the ex...
Embodiment 3
[0082] It was grown by metal-organic chemical vapor deposition (MOCVD) on a low-resistivity 6-inch silicon-based (111) p-type substrate 1 . For the consideration of high breakdown voltage, a 4 μm thick AlN nucleation layer and a carbon-doped GaN buffer layer were first grown on the substrate 1 . Then grow 300nm undoped GaN channel layer 3, followed by 5nm undoped Al 0.22 An ultra-thin AlGaN barrier layer 4 of GaN, and a 1nm GaN cap layer is grown again, so that the ultrathin AlGaN barrier layer 4 is sandwiched between the 1nm GaN cap layer and the GaN channel layer 3 . Oxidation of the ultra-thin AlGaN barrier layer 4 is prevented using a GaN cap layer.
[0083] A 100-nm-thick silicon oxide mask layer was deposited on the GaN cap layer by plasma-enhanced chemical vapor deposition (PECVD), and the regrowth was pattern-defined using a dilute HF wet etch solution.
[0084] Use low damage SF 6 +BCl 3 The mixed gas removes the 1nm GaN cap layer by dry etching process, and the e...
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