ALD heating furnace

Abstract

The invention discloses an ALD heating furnace. The ALD heating furnace comprises a cylindrical cavity. A front furnace door and a rear furnace door are arranged at the two ends of the cylindrical cavity correspondingly. A diversion cavity is formed in the cylindrical cavity. An air inlet assembly is arranged at the position of the front furnace door. The air inlet assembly comprises a diversion cavity door, an outer-layer flow equalizing plate and an inner-layer flow equalizing plate. Concave parts are arranged at corresponding positions of an inner cavity door and the outer-layer flow equalizing plate, and a round thin air inlet chamber is formed. The inner-layer flow equalizing plate and the outer-layer flow equalizing plate are separated with a certain interval through a bolt and a gasket. In the state that the front furnace door is closed, a square air inlet chamber is also formed by the inner-layer flow equalizing plate, the outer-layer flow equalizing plate and the side wall ofthe inner cavity. Round air holes which are the same in size are distributed in the inner-layer flow equalizing plate and the outer-layer flow equalizing plate at equal intervals, the hole diameters of the inner-layer flow equalizing plate are slightly smaller than that of the outer-layer flow equalizing plate, and therefore airflow can be dispersed to pass. Due to a uniform air inlet system, precursor is evenly conveyed to a substrate or other reaction substrates, and therefore a reactant can be rapidly wrapped on the substrate or a last atom layer, the material growth uniformity is effectively improved, and the vast majority of the precursor can be used for film forming.

Description

technical field [0001] The invention relates to the technical field of atomic deposition, in particular to an ALD heating furnace. Background technique [0002] The traditional ALD device needs to introduce a large amount of reactants into the reaction chamber, so that the substrate or the upper atomic layer is immersed in the atmosphere of the precursor, but due to gas flow and vacuum limitations, it is difficult to ensure that the precursor is on the entire substrate or the upper atomic layer. The comprehensive coverage of the film is easy to form defects such as pinholes, resulting in uneven contact between the precursor and the substrate or the upper atomic layer, resulting in poor film formation uniformity. At the same time, due to the incomplete reaction, a large amount of precursors are charged to cause a large amount of residual gas, which directly affects the rate of film formation in the entire cycle and causes waste of precursors. Contents of the invention [0...

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem of low deposition efficiency caused by the poor uniformity of the contact between the precursor and the substrate or the upper atomic layer, the utilization rate of the reactant and the long growth period of the material in the prior art

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