Double in-line storage module device of storage-level memory and caching method thereof

A dual-in-line memory module technology, applied in the field of memory, can solve problems such as signal interference, affecting speed, and great difficulty, achieving high-speed writing and improving life expectancy

Pending Publication Date: 2020-06-12
XI AN UNIIC SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This bifurcated signal is very difficult to implement high-speed signals on the printed circuit board PCB (Print Circuit Board), because the feedback of the high-speed signal will interfere with the signal of the other channel and affect the rate.

Method used

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  • Double in-line storage module device of storage-level memory and caching method thereof
  • Double in-line storage module device of storage-level memory and caching method thereof
  • Double in-line storage module device of storage-level memory and caching method thereof

Examples

Experimental program
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Embodiment Construction

[0103] Embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0104] figure 2 It is a storage space distribution diagram in a dual in-line memory module DIMM device of a storage class memory SCM according to an embodiment of the present invention.

[0105] Such as figure 2 As shown in , the memory space of a storage class memory SCM DIMM device generally includes a first storage area (“hot area”) 21 and a second storage area (“cold area”) 22 .

[0106] In the present invention, "hot area" refers to an area where the host or central processing unit frequently reads and writes (that is, stores data with a host access frequency in the first range), and "cold area" refers to an area where the host or central processing unit does not An area that is read and written frequently (that is, stores data with a host access frequency in the second range, and the host access frequency in the first range is greater than the ...

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Abstract

The invention relates to a double in-line memory module device of a storage-level memory and a caching method thereof. According to the double in-line memory module of the storage-level memory, a nonvolatile memory on the double in-line memory module can be expanded into a memory of a system for use, so that the memory space of the system is increased. Besides, a core controller is arranged on thedouble in-line memory module DIMM of the storage level memory SCM and is used for driving the double in-line memory module DIMM when the command/address signal and the data signal are output so as toimprove the rate performance of the double in-line memory module DIMM.

Description

technical field [0001] The present invention relates to the field of memory. More specifically, the present invention relates to a storage class memory (SCM) dual in-line memory module (Dual In-line Memory Module, DIMM) device and a caching method thereof. Background technique [0002] The dual-in-line memory module DIMM of the storage-class memory SCM is a new type of dual-in-line memory module, and there is a memory space on the module that can be accessed in the form of storage. [0003] The signal flow direction and interface schematic diagram in the dual in-line memory module DIMM of the known storage class memory SCM existing in the prior art is as follows figure 1 shown in . In the prior art, by using a stub signal, a host or a central processing unit (CPU) can access a dynamic random access memory DRAM (Dynamic Random Access Memory) and a controller such as The non-volatile controller NVC (Non-Volatile Controller), and achieves the purpose of accessing the non-vol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02G06F12/0871
CPCG06F12/0246G06F12/0871
Inventor 周小锋江喜平
Owner XI AN UNIIC SEMICON CO LTD
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