Monocrystalline silicon production furnace body

Abstract

The invention discloses a monocrystalline silicon production furnace body. The monocrystalline silicon production furnace body structurally comprises an equipment body, a controller, a furnace body, asmoothing device and a lifting cylinder. The beneficial effects are as follows: through mutual cooperation of a smoothing and pressing structure and granule twisting assemblies of a grinding and extruding mechanism, the liquid which is firstly heated at the bottom of the furnace body is smoothed back and forth, and therefore, uniform stirring and heating are realized through exchange with an internal solution; and meanwhile, under the action of the granule twisting assemblies, collision smoothing is done to the solution attached to the bottom to avoid the formation of partial attachment on the bottom surface of the furnace body. According to the monocrystalline silicon production furnace body, by means of an arranged hook homogenization structure, impact type hook thorn removing treatmentis conducted on impurities contained in the solution during flowing, the impurities are confined, blocked and gathered at one position under the action of magnetic strips, and therefore the fine purity of monocrystalline silicon liquid is achieved.

Description

technical field [0001] The invention relates to the field of new material production equipment, more precisely, a single crystal silicon production furnace body. Background technique [0002] With the birth of new materials, the application of new materials, especially single crystal silicon materials, has been chosen in more and more fields, and the purity of single crystal silicon solution is particularly important in the production process. The production of crystalline silicon rods has the following defects: [0003] During the production process of monocrystalline silicon, the impurities contained in the solution are likely to affect the quality of the finished monocrystalline silicon, and at the same time, the inner surface of the furnace is heated at a higher temperature than the inner surface, so the surface is prone to solution bonding. Contents of the invention [0004] Aiming at the deficiencies in the prior art, the object of the present invention is to provid...

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Problems solved by technology

[0004] Aiming at the deficiencies in the prior art, the object of the present invention is to provide a monocrystalline silicon production furnace to solve the problem that the impurities contained in the solution may easily affect the finished monocrystalline silicon during the production process of the prior art monocrystalline silicon. At the same time, the inner surface of the furnace body is heated at a higher temperature than the inner surface, so the surface is prone to the defect of solution bonding

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