Resistive random access memory device
A resistive memory and device technology, applied in the field of memory, can solve the problems of high power consumption, low consistency and uneven distribution of conductive filaments in resistive memory devices, and achieve good uniformity and reliability, uniform and reliable high and low resistance state effect
Active Publication Date: 2020-06-16
PEKING UNIV
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Problems solved by technology
[0004] The growth and breakage of conductive filaments in resistive memory devices fluctuate, and the distribution of conductive filaments is uneven, resulting in the problems of high power consumption and low consistency in resistive memory devices
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[0023] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0024] Refer below figure 1 A resistive memory device according to an embodiment of the present invention is described.
[0025] Such as figure 1 As shown, the resistive switchable memory device according to the embodiment of the present invention includes a first electrode layer 100, an insulating dielectric layer 200, a resistive switchable la...
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Abstract
The embodiment of the invention provides a resistive random access memory device. The device comprises a first electrode layer, an insulating dielectric layer, a resistive random access layer, an oxygen storage layer and a second electrode layer which are sequentially stacked. The resistive random access layer comprises a plurality of sub resistive random access layers. According to the resistiverandom access memory device provided by the embodiment of the invention, the resistive random access memory device is provided with the resistive random access layer with the plurality of sub resistive random access layers; and local conductive filaments are formed among the plurality of sub resistive random access layers which are attached to each other, so that uniform and reliable high and lowresistance states can be provided, and the resistive random access memory device has good uniformity and reliability.
Description
technical field [0001] The present invention relates to the technical field of memory, and more specifically, to a resistive memory device. Background technique [0002] With the development of storage technology, memory is widely used in various electronic products, but the principle of proportional reduction that is close to the limit makes the traditional floating gate storage technology unable to be applied in the process lower than 40nm. In addition, flash memory has problems such as slow erasing and writing speed, high erasing and writing voltage, and low erasing and writing times, so that the industry and scientific research fields are striving to develop new non-volatile memory technologies. [0003] Resistive memory device is a non-volatile memory device, which has the advantages of simple structure, fast read and write speed, low power consumption, and high device integration, and has become a research hotspot in the current industry and academia. Existing resisti...
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Login to View More IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/801
Inventor 刘力锋王泽昊马跃驰于傲丁向向冯玉林张兴
Owner PEKING UNIV