Device and method for precise diameter expansion of aln seed crystal

Abstract

The invention relates to a device and method for accurately expanding the diameter of an AlN seed crystal, belonging to the field of crystal growth. The operation is simple and the efficiency is high, and AlN crystals of corresponding sizes can be produced according to needs. The device for accurately expanding the diameter of the AlN seed crystal includes a graphite heater, a crucible and a growth assembly. The crucible is located inside the graphite heater, and the growth assembly is located inside the crucible. The silicon carbide seed gasket is detachably connected to the crucible gasket and the crucible body. Replacing silicon carbide seed gaskets of different sizes to obtain AlN seed crystals of corresponding sizes is easy to operate and fundamentally solves the problem of difficult diameter expansion during the growth of aluminum nitride crystals. Compared with the existing technology, AlN seed crystals The device and method for precise diameter expansion accelerates the growth and expansion rate of aluminum nitride crystals, saves the cost and time of aluminum nitride crystal growth and expansion, and accelerates the development process of the aluminum nitride crystal growth industry.

Description

technical field [0001] The invention relates to a device and method for accurately expanding the diameter of an AlN seed crystal, belonging to the field of crystal growth. Background technique [0002] In the process of growing aluminum nitride crystals using the PVT method, because the radial growth of AlN crystals is very difficult, the diameter of AlN crystals hardly changes, and the seed crystal is very important for crystal growth, and there is no corresponding high-quality and large-sized seed crystal , It is almost impossible to grow high-quality crystals, how to use the diameter expansion method in the crystal growth process of silicon carbide (continuous iterative growth, each time increasing the diameter a little) for AlN crystal growth, diameter expansion is more difficult and cycle and cost It will far exceed the diameter expansion of crystals such as silicon carbide, and each expansion cannot guarantee that the diameter will reach the expected state. [0003] B...

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Problems solved by technology

[0002] In the process of growing aluminum nitride crystals using the PVT method, because the radial growth of AlN crystals is very difficult, the diameter of AlN crystals hardly changes, and the seed crystal is very important for crystal growth, and there is no corresponding high-quality and large-sized seed crystal , It is almost impossible to grow high-quality crystals, how to use the diameter expansion method in the crystal growth process of silicon carbide (continuous iterative growth, each time increasing the diameter a little) for AlN crystal growth, diameter expansion is more difficult and cycle and cost It will far exceed the expansion of crystals such as silicon carbide, and each expansion cannot guarantee that the diameter will reach the expected state

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