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Device and method for accurately expanding AlN seed crystal

A seed crystal, precise technology, applied in post-processing devices, chemical instruments and methods, single crystal growth, etc., can solve the difficult cycle and cost of diameter expansion, cannot guarantee the diameter to reach the expected state, and the difficulty of radial growth of AlN crystals, etc. problems, to achieve the effect of simple operation, improving crystal purity and speeding up the development process

Active Publication Date: 2020-06-23
哈尔滨科友半导体产业装备与技术研究院有限公司
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  • Description
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  • Application Information

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Problems solved by technology

[0002] In the process of growing aluminum nitride crystals using the PVT method, because the radial growth of AlN crystals is very difficult, the diameter of AlN crystals hardly changes, and the seed crystal is very important for crystal growth, and there is no corresponding high-quality and large-sized seed crystal , It is almost impossible to grow high-quality crystals, how to use the diameter expansion method in the crystal growth process of silicon carbide (continuous iterative growth, each time increasing the diameter a little) for AlN crystal growth, diameter expansion is more difficult and cycle and cost It will far exceed the expansion of crystals such as silicon carbide, and each expansion cannot guarantee that the diameter will reach the expected state

Method used

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  • Device and method for accurately expanding AlN seed crystal
  • Device and method for accurately expanding AlN seed crystal
  • Device and method for accurately expanding AlN seed crystal

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specific Embodiment approach 1

[0039] Specific implementation mode one: combine Figure 1-Figure 4 Describe this embodiment mode, a device for accurately expanding the diameter of AlN seed crystals in this embodiment mode, including a graphite heater 1, a crucible 2 and a growth assembly 3, the crucible 2 is located inside the graphite heater 1, and the growth assembly 3 is located at the bottom of the crucible 2 internal;

[0040] Graphite heater 1 comprises graphite heater upper cover 1-1, graphite heater side wall 1-2, graphite heater lower cover 1-3 and graphite raw material filter sheet 1-4, graphite heater upper cover 1-1 and graphite heater The heater lower cover 1-3 is respectively connected with the upper and lower ends of the graphite heater side wall 1-2, the graphite raw material filter 1-4 is located inside the graphite heater side wall 1-2, and the graphite raw material filter 1-4 is connected to the graphite heater side wall 1-2. The heater side wall 1-2 is connected, and the graphite raw ma...

specific Embodiment approach 2

[0043] Specific implementation mode two: combination Figure 1-Figure 4 Describe this embodiment, a device for accurately expanding the diameter of AlN seed crystals in this embodiment, the raw material filter 2-4 and the graphite raw material filter 1-4 have a mesh structure, and the raw material filter 2-4 can make graphite When the powder volatilizes, it diffuses evenly, so that the inner surface of the crucible is evenly carbonized. The raw material filter 2-4 can filter out impurities in the raw material and improve the crystal purity. The graphite raw material filter 1-4 graphite raw material filter can make the graphite powder volatilize Uniform diffusion, so that the outer surface of the crucible is evenly carbonized.

specific Embodiment approach 3

[0044] Specific implementation mode three: combination Figure 1-Figure 4 To illustrate this embodiment, a method for accurately expanding the diameter of an AlN seed crystal in this embodiment includes the following steps:

[0045] Step 1: Put the crucible 2 into the graphite heater 1, add graphite powder between the graphite raw material filter 1-4 of the graphite heater 1 and the lower cover 1-3 of the graphite heater, and filter the raw material in the crucible body 2-5 Graphite powder is added to the underside of sheet 2-4, the material of crucible cover 2-1, crucible gasket 2-2, raw material filter sheet 2-4 and crucible body 2-5 is Ta, and the material of silicon carbide seed gasket 2-3 is Ta material silicon carbide;

[0046] Step 2: evacuate graphite heater 1 and crucible 2 to 10 -4 -10 -5 Pa;

[0047] Step 3: Inflate nitrogen gas at a rate of 50mL / min-1000mL / min, and the pressure in the reaction device is between 200-700Torr;

[0048] Step 4: heating the graphit...

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Abstract

The invention relates to a device and method for accurately expanding AlN seed crystals, and belongs to the field of crystal growth. The operation is simple, the efficiency is high, and the AlN crystal with the corresponding size can be manufactured as required. The device for accurately expanding the AlN seed crystal comprises a graphite heater, a crucible and a growth combination, the crucible is positioned in the graphite heater; the growth combination is positioned in the crucible; the silicon carbide seed crystal gasket is detachably connected with the crucible gasket and the crucible body; AIN seed crystals with corresponding sizes can be obtained by replacing silicon carbide seed crystal gaskets with different sizes; the device and the method are simple to operate, the problem of difficulty in expanding in the growth process of the aluminum nitride crystal is fundamentally solved, and compared with the prior art, the device and the method for accurately expanding of the AlN seedcrystal accelerate the growth and expanding speed of the aluminum nitride crystal, save the growth and expanding cost and time of the aluminum nitride crystal and accelerate the development process of the growth industry of the aluminum nitride crystal.

Description

technical field [0001] The invention relates to a device and method for accurately expanding the diameter of an AlN seed crystal, belonging to the field of crystal growth. Background technique [0002] In the process of growing aluminum nitride crystals using the PVT method, because the radial growth of AlN crystals is very difficult, the diameter of AlN crystals hardly changes, and the seed crystal is very important for crystal growth, and there is no corresponding high-quality and large-sized seed crystal , It is almost impossible to grow high-quality crystals, how to use the diameter expansion method in the crystal growth process of silicon carbide (continuous iterative growth, each time increasing the diameter a little) for AlN crystal growth, diameter expansion is more difficult and cycle and cost It will far exceed the diameter expansion of crystals such as silicon carbide, and each expansion cannot guarantee that the diameter will reach the expected state. [0003] B...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B35/00C30B29/40C30B23/00
CPCC30B35/007C30B29/403C30B23/00
Inventor 赵丽丽范国峰张胜涛袁文博刘德超
Owner 哈尔滨科友半导体产业装备与技术研究院有限公司
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