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Chemical vapor deposition epitaxy device and method for preparing PVT method AlN seed crystals

A chemical vapor deposition and seed crystal technology, applied in chemical instruments and methods, from chemically reactive gases, single crystal growth, etc., can solve the problems of AlN crystal diameter expansion difficulty, low yield, complex process, etc., and achieve simple structure , low growth temperature, and the effect of accelerating the diameter expansion rate

Inactive Publication Date: 2020-06-26
哈尔滨科友半导体产业装备与技术研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The research and development purpose of the present invention is to solve the problem of difficulty in expanding the diameter of AlN crystals and low yield due to complex processes during the growth of aluminum nitride crystals. A brief overview of the present invention is given below in order to provide some insights into the present invention. basic understanding of

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  • Chemical vapor deposition epitaxy device and method for preparing PVT method AlN seed crystals
  • Chemical vapor deposition epitaxy device and method for preparing PVT method AlN seed crystals
  • Chemical vapor deposition epitaxy device and method for preparing PVT method AlN seed crystals

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specific Embodiment approach 1

[0046] Specific implementation mode one: combine Figure 1-Figure 3 Describe this embodiment, a chemical vapor deposition epitaxy device for preparing PVT AlN seed crystals in this embodiment, including an air inlet 1, an upper rotating motor 2, an upper tantalum carbide deflector 3, a housing 4, and a coil 5. Fixed bracket 6, lifting block limit hole 12, lifting block 13, retractable bellows 9, lower tantalum carbide guide table 7, rotating lifting device 10, rotating rod 11 and multiple growing devices 8, the top of the housing 4 There is an air inlet 1, the air inlet 1 communicates with the inside of the housing 4, the upper rotating motor 2 is installed at the center of the top of the housing 4, a fixed bracket 6 is installed at the bottom of the housing 4, and a coil is installed on the outer wall of the housing 4 5. The upper and lower tantalum carbide flow guides 3 and the lower tantalum carbide flow guides 7 are installed symmetrically inside the shell 4, one end of th...

specific Embodiment approach 2

[0047] Specific implementation mode two: combination Figure 1-Figure 3 Describe this embodiment, based on specific embodiment 1, a chemical vapor deposition epitaxy device for preparing AlN seed crystals by PVT method in this embodiment, the rotating lifting device 10 includes a lower rotating motor 10-1, a motor fixing frame 10 -2, lifting motor 10-3, worm screw 10-4, worm gear 10-5, the lower end of the lower rotating motor 10-1 is fixedly installed on the motor fixing frame 10-2, and the output end of the lower rotating motor 10-1 is fixedly installed with a worm gear 10 -5, the lifting motor 10-3 is fixedly installed on the motor fixing frame 10-2, the output end of the lifting motor 10-3 is fixedly installed with a worm screw 10-4, the worm screw 10-4 and the worm wheel 10-5 are engaged and installed, and the lower rotating motor 10 The top of -1 is fixedly connected with the rotating rod 11.

specific Embodiment approach 3

[0048] Specific implementation mode three: combination Figure 1-Figure 3 Describe this embodiment, based on specific embodiment 1, a chemical vapor deposition epitaxy device for preparing PVT AlN seed crystals in this embodiment, the rotating lifting device 10 includes a lower rotating motor 10-1, a lifting motor 10- 3. The rotating motor frame 10-6, screw mandrel 10-7, fixed seat 10-8, output worm 10-9 and two bearings 10-12, the top of the fixed seat 10-8 is processed with a first through hole 10-10, The left and right ends of the fixed seat 10-8 are symmetrically processed with second through holes 10-11 respectively, and the lower rotating motor 10-1 is fixedly installed on the rotating motor frame 10-6, and the rotating motor frame 10-6 is fixed to the top of the screw rod 10-7 Install, screw mandrel 10-7 is installed in the first through hole 10-10, and two bearings 10-12 are respectively installed in the second through hole 10-11 that the left and right ends of holder ...

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Abstract

The invention discloses a chemical vapor deposition epitaxy device and method for preparing PVT method AlN seed crystals, and belongs to the field of crystal growth. The device comprises an air inlet,an upper rotary motor, an upper tantalum carbide flow guide table, a shell, a coil, a fixed support, a lifting block limiting hole, a lifting block, a telescopic corrugated pipe, a lower tantalum carbide flow guide table, a rotary lifting device, a rotary rod and a plurality of growth apparatuses. The research and development purpose of the invention is to solve the problems of difficult diameterexpansion of the AlN crystals, complex process and low yield in the aluminum nitride crystal growth process.

Description

technical field [0001] The invention relates to a chemical vapor deposition epitaxy device and method for preparing AlN seed crystals by PVT method, belonging to the field of crystal growth. Background technique [0002] During the AlN crystal growth process using the PVT method, because the AlN crystal radial growth is very difficult, the diameter of the AlN crystal hardly changes, and the seed crystal is very important for the growth of the AlN crystal, and there is no corresponding high-quality and large-sized seed. There is no way to grow high-quality AlN crystals, so how to use the diameter expansion method in the crystal growth process such as silicon carbide for the growth of AlN crystals, so that AlN crystals grow iteratively, each time increasing a little diameter, has become a crucial Important issues. The current devices and methods for preparing AlN seed crystals have difficulties in diameter expansion, and the cycle and cost will far exceed the diameter expansi...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B23/00C30B25/02
CPCC30B23/00C30B25/02C30B29/403
Inventor 赵丽丽范国峰袁文博刘德超张胜涛
Owner 哈尔滨科友半导体产业装备与技术研究院有限公司
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