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Radiation detector and imaging devices, mfg. method and use thereof

A radiation detector and detection unit technology, applied in radiation control devices, radiation intensity measurement, semiconductor/solid-state device manufacturing, etc., can solve problems such as inability to provide electrical isolation of contacts

Inactive Publication Date: 2003-07-02
SIEMENS AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] It has been found that, particularly when using CdZnTe as the semiconductor material, conventional methods of forming contacts on the detector surface do not provide as high a degree of electrical isolation of the contacts as is required to make good use of the International Application PCTEP95 incorporated herein by reference. Advantages of the imaging device described in / 02056

Method used

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  • Radiation detector and imaging devices, mfg. method and use thereof
  • Radiation detector and imaging devices, mfg. method and use thereof
  • Radiation detector and imaging devices, mfg. method and use thereof

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Embodiment Construction

[0051] FIG. 1 illustrates a method of forming metal contacts on a semiconductor substrate at locations defining radiation detection elements. In this example, the semiconductor substrate is assumed to be composed of cadmium zinc telluride (CdZnTe), although other semiconductor materials such as cadmium telluride (CdTe) are also possible. Also, it is assumed that the metal used for the metallization layers and gold contacts is gold, although it is understood that other metals, alloys or other conductive materials such as platinum or indium could be used.

[0052] Thus, Fig. 1 is a schematic cross-sectional view from the side of the detector at various stages of forming gold contacts on a CdZnTe substrate.

[0053] Step A: The CdZnTe detector substrate 1 has a surface uniformly metallized with gold 2 (lower surface in FIG. 1 ).

[0054] Step B: Spin-coat photoresist material (photoresist) 3 on the bare surface (upper surface in FIG. 1 ) of the CdZnTe substrate. A photoresist i...

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Abstract

A method, suitable for forming metal contacts 31 on a semiconductor substrate 1 at positions for defining radiation detector cells, includes the steps of forming one or more layers of material 11,12 on a surface of the substrate with openings 23 to the substrate surface at the contact positions; forming a layer of metal 24 over the layer(s) of material and the openings; and removing metal at 28 overlying the layer(s) of material to separate individual contacts. Optionally, a passivation layer 11 to be left between individual contacts on the substrate surface, may be applied during the method. A method according to the invention prevents etchants used for removing unwanted gold (or other contact matter) coming into contact with the surface of the substrate (e.g. CdZnTe) and causing degradation of the resistive properties of that substrate. The product of the method and uses thereof are also described.

Description

technical field [0001] The present invention relates to methods of manufacturing radiation detectors and radiation imaging devices, radiation detectors and imaging devices manufactured by these methods, and uses of these imaging devices. Background technique [0002] A typical method of fabricating a radiation detector for an imaging device includes forming layers of a metal, such as aluminum, on both major surfaces of a flat semiconductor substrate, forming a layer of photoresist material to cover the semiconductor material, and exposing the flat surface with a suitable mask pattern. The photoresist material on the substrate surface, remove the photoresist material, expose the metal pattern to be removed, etch the metal to be removed, and then remove the rest of the photoresist material, leaving the contact on one surface of the substrate Dot pattern and metallization layer on the other surface of the substrate. The contacts on the first surface of the substrate then defin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01T1/24H01L21/28H01L21/8234H01L27/14H01L27/146H01L31/0224H01L31/0264
CPCY10S438/93Y10S438/958H01L27/14643H01L21/823406H01L31/022408
Inventor R·O·奥拉瓦J·I·派蒂尔T·G·舒尔曼M·E·萨拉基诺斯K·E·斯帕蒂奥蒂斯P·Y·雅拉斯
Owner SIEMENS AG