Column-level ADC for CMOS image sensor and implementation method thereof

A technology of image sensor and implementation method, which is applied in the direction of image communication, color TV parts, TV system parts, etc., can solve the problem of low conversion accuracy of column-level single-slope ADC, so as to improve the overall performance and increase the gain , to counteract the effect of slope distortion

Active Publication Date: 2020-06-30
XIAN MICROELECTRONICS TECH INST
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the shortcomings of the low conversion accuracy of the existing column-level single-slope ADC, and provide a column-level ADC for CMOS image sensors and its implementation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Column-level ADC for CMOS image sensor and implementation method thereof
  • Column-level ADC for CMOS image sensor and implementation method thereof
  • Column-level ADC for CMOS image sensor and implementation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0045] It should be noted that the terms "first" and "second" in the description and claims of the present invention and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a column-level ADC for a CMOS image sensor and an implementation method of the column-level ADC, and belongs to the field of analog-to-digital converters of CMOS image sensors.The invention discloses the column-level ADC. A photoelectric signal Vin is input into a first-stage negative end of a comparator, slope reference signals are input into a positive end of the comparator, an output end of the comparator first stage is connected with an input end of the comparator second stage, an output end of the comparator second stage is connected with a positive end of the comparator first stage through a compensation capacitor, and an output end of the comparator second stage further provides external output, and the overturning directions of the comparator first stage and the comparator second stage are opposite. According to the invention, slope signal distortion can be effectively suppressed, and the conversion precision is improved.

Description

technical field [0001] The invention belongs to the field of analog-to-digital converters of CMOS image sensors, in particular to a column-level ADC for CMOS image sensors and its realization method. Background technique [0002] CMOS image sensors are widely used in military and civilian fields. The digital output CMOS image sensor is convenient for subsequent data processing, and has become the mainstream direction of today's CMOS image sensor. The ADC integration technology of CMOS image sensor mainly includes: pixel integrated ADC technology, column integrated ADC technology and chip integrated ADC technology. Such as figure 2 As shown in (a), the pixel integrated ADC technology is characterized by using a low-speed ADC converter for each photodetector, and a large number of low-speed ADC converters work in parallel to achieve the effect of a high-speed ADC converter. Such as figure 2 As shown in (b), the column integration is the function that each ADC converter onl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/374H04N5/3745
CPCH04N25/76H04N25/772
Inventor 李婷何杰时光吴龙胜
Owner XIAN MICROELECTRONICS TECH INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap