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Application of barium-doped molybdenum sulfide material in self-energized piezoelectric enhanced hydrogen production

A molybdenum sulfide piezoelectric and molybdenum sulfide technology, applied in the production of molybdenum sulfide and hydrogen, catalyst activation/preparation, etc., can solve the problems of high cost, low abundance and limited application of precious metals

Pending Publication Date: 2020-07-07
SUZHOU UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the high cost and low abundance of noble metals limit their applications

Method used

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  • Application of barium-doped molybdenum sulfide material in self-energized piezoelectric enhanced hydrogen production
  • Application of barium-doped molybdenum sulfide material in self-energized piezoelectric enhanced hydrogen production
  • Application of barium-doped molybdenum sulfide material in self-energized piezoelectric enhanced hydrogen production

Examples

Experimental program
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preparation example Construction

[0045] Further, the barium-doped molybdenum sulfide material is prepared by a hydrothermal method, and the preparation method includes the following steps:

[0046] (1) Sodium molybdate was dissolved in deionized water, and ultrasonically treated for 30-60mins to mix uniformly to obtain solution A;

[0047] (2) Dissolve thiourea in deionized water, and sonicate for 30-60mins until mixed uniformly to prepare solution B;

[0048] (3) dissolving barium chloride dihydrate in deionized water, and ultrasonic treatment for 30-60mins until mixed uniformly to obtain solution C;

[0049] (4) Add solution B and solution C dropwise to solution A, and ultrasonically treat for 30-60mins until mixed uniformly to obtain mixed solution D;

[0050] (5) Transfer the mixed solution D to a high-pressure reactor, and react at a temperature of 150-300° C. for 20-30 hours to prepare a barium-doped molybdenum sulfide material.

[0051] Further, the concentration of the solution A is 0.1mol / L-1.0mol / L....

Embodiment 1

[0067] Barium Doped Molybdenum Sulfide Material Ba-MoS as Piezoelectric Enhancement Material 2 Preparation of semiconductor materials where the mass of Ba is MoS 2 10% of the mass.

[0068] (1) 2.42g (0.01mol) sodium molybdate (NaMoO 4 .2H 2 O) be dissolved in 30mL deionized water, and sonicate 30mins to mix homogeneously to prepare solution A;

[0069] (2) 3.05g (0.04mol) thiourea [(NH 2 ) 2 CS] was dissolved in 30mL deionized water, and ultrasonically treated for 30mins to mix uniformly to obtain solution B;

[0070] (3) 0.366g (0.0015mol) of barium chloride dihydrate was dissolved in deionized water, and ultrasonically treated for 60mins until mixed uniformly to obtain solution C;

[0071] (4) Add solution B and solution C dropwise to solution A, and ultrasonically treat for 60mins until mixed uniformly to obtain mixed solution D;

[0072] (5) Set the volume of the mixed liquid D to 100mL and transfer it to a high-pressure reactor. The temperature is controlled at 20...

Embodiment 2

[0079] Barium Doped Molybdenum Sulfide Material Ba-MoS as Piezoelectric Enhancement Material 2 Preparation of semiconductor materials where the mass of Ba is MoS 2 15% of the mass.

[0080] (1) 2.42g (0.01mol) sodium molybdate (NaMoO 4 .2H 2 O) be dissolved in 30mL deionized water, and sonicate 30mins to mix homogeneously to prepare solution A;

[0081] (2) 3.05g (0.04mol) thiourea [(NH 2 ) 2 CS] was dissolved in 30mL deionized water, and ultrasonically treated for 30mins to mix uniformly to obtain solution B;

[0082] (3) 0.549g (0.0022mol) barium chloride dihydrate was dissolved in deionized water, and ultrasonically treated for 60mins until mixed uniformly to obtain solution C;

[0083] (4) Add solution B and solution C dropwise to solution A, and ultrasonically treat for 60mins until mixed uniformly to obtain mixed solution D;

[0084] (5) Set the volume of the mixed liquid D to 100mL and transfer it to a high-pressure reactor. The temperature is controlled at 200°C...

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Abstract

The invention discloses an application of a barium-doped molybdenum sulfide material in self-energized piezoelectric enhanced hydrogen production. The barium-doped molybdenum sulfide material (Ba-MoS2) comprises a molybdenum sulfide MoS2 material with response to near-infrared light and divalent barium ions doped in molybdenum sulfide and on the surface of molybdenum sulfide. The barium-doped molybdenum sulfide material provided by the invention can effectively utilize natural mechanical energy (such as vibration, noise, ultrasonic wave, stirring and the like), takes ammonia borane with the hydrogen content as high as 19.6 wt% as a hydrogen storage material to prepare hydrogen energy at normal temperature and normal pressure, and realizes self-energized piezoelectric enhanced hydrogen production. The hydrogen fuel can be prepared and used at any time, and the problem that hydrogen is not easy to store is solved. The preparation method of the barium-doped molybdenum sulfide material provided by the invention is simple, feasible, green and environment-friendly.

Description

technical field [0001] The invention relates to the application of a barium-doped molybdenum sulfide material in self-powered piezoelectric enhanced hydrogen production, in particular to the application of barium-doped molybdenum sulfide material in photocatalytic self-powered piezoelectric enhanced hydrogen production, which belongs to the field of new energy. Background technique [0002] With the rapid development of human society, people's demand for energy is increasing, and the depletion of fossil fuels has caused energy shortages. Hydrogen energy has attracted widespread attention because of its high combustion value and no secondary pollution. However, hydrogen is prone to explosion, and the cost of compressing hydrogen is relatively high. Therefore, how to produce and use hydrogen safely, effectively and economically has always been a technical problem to be solved for hydrogen energy and hydrogen economy. Ammoniaborane (NH 3 BH 3 ) is a main hydrogen storage mat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G39/06C01B3/06B01J19/10B01J19/12B01J27/051B01J37/10
CPCC01G39/06C01B3/065B01J19/10B01J19/128B01J27/051B01J37/10C01P2002/72C01P2004/04C01P2006/60B01J35/39Y02E60/36
Inventor 刘守清黄匡正刘文晓
Owner SUZHOU UNIV OF SCI & TECH
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